Room Temperature Gan/Algan Self-Mixing Terahertz Detector Enhanced by Resonant Antennas

Y. F. Sun,J. D. Sun,Y. Zhou,R. B. Tan,C. H. Zeng,W. Xue,H. Qin,B. S. Zhang,D. M. Wu

DOI: https://doi.org/10.1063/1.3601489

IF: 4

2011-01-01

Applied Physics Letters

Abstract:This letter focuses on the fabrication and characterization of a terahertz detector integrated with a group of low pass filters and resonant antennas. The detector operates as a self-mixer on GaN/AlGaN high electron mobility transistor (HEMT). At room temperature, a strong dc photocurrent is produced with the aid of the antennas and filters. The responsivity of our HEMT device is estimated to be 53 mA/W and a noise equivalent power of 1 nW/Hz can be achieved at 300 K. In addition, the sensor properties of a similar HEMT detector without filter are tested as a comparison.