Abstract:Field-effect transistors coupled to integrated antennas [terahertz field-effect transistors (TeraFETs)] are photodetectors being actively developed for the terahertz (THz) frequency range (∼100 GHz–10 THz). Among them, graphene TeraFETs (G-TeraFETs) have demonstrated distinctive photoresponse features compared to those made from elementary semiconductors. For instance, previous studies have shown that the G-TeraFETs exhibit a THz response that comprises two components: the resistive self-mixing (RSM) and photothermoelectric effect (PTE). The RSM and PTE arise from carrier density oscillations and carrier heating, respectively. In this work, we confirm that the photoresponse can be considered a combination of RSM and PTE, with PTE being the dominant rectification mechanism at higher frequencies. For our chemical vapor deposited (CVD) G-TeraFETs with asymmetric antenna coupling, the PTE response dominates over the RSM at frequencies above 100 GHz. We find that the relative contribution of the RSM and PTE to the photoresponse is strongly frequency-dependent. Electromagnetic wave simulations show that this behavior is due to the relative change in the total dissipated power between the gated and ungated channel regions of the G-TeraFET as the frequency increases. The simulations also indicate that the channel length over which the PTE contributes to the photoresponse below the gate electrode is approximately the same as the electronic cooling length. Finally, we identify a PTE contribution that can be attributed to the contact doping effect in graphene close to the metal contacts. Our detectors achieve a minimum optical noise-equivalent power of 101 (114) pW/√Hz for asymmetric (symmetric) THz antenna coupling conditions at 400 GHz. This work demonstrates how the PTE response can be used to optimize the THz responsivity of the G-TeraFETs.

Modeling an Antenna-Coupled Graphene Field-Effect Terahertz Detector

Probing and Modelling the Localized Self-Mixing in A Gan/Algan Field-Effect Terahertz Detector

Room-Temperature, Low-Impedance and High-Sensitivity Terahertz Direct Detector Based on Bilayer Graphene Field-Effect Transistor

Terahertz Detection with Graphene FETs: Photothermoelectric and Resistive Self-Mixing Contributions to the Detector Response

Realization Of Resonant Plasmon Excitation And Detection

Detection of Incoherent Terahertz Light Using Antenna-Coupled High-Electron-Mobility Field-Effect Transistors

High-Responsivity, Low-Noise, Room-Temperature, Self-Mixing Terahertz Detector Realized Using Floating Antennas on A Gan-Based Field-Effect Transistor

Room-temperature Terahertz Detection Based on CVD Graphene Transistor

Enhancement of Terahertz Coupling Efficiency by Improved Antenna Design in GaN/AlGaN High Electron Mobility Transistor Detectors

Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As$_x$P$_{1-x}$ gate layer

Monolayer Graphene Terahertz Detector Integrated with Artificial Microstructure.

Detection of incoherent broadband terahertz light using antenna-coupled high-electron-mobility field-effect transistors

Hot-electron resonant terahertz bolometric detection in the graphene/black-AsP field-effect transistors with a floating gate

The Effect of Symmetry on Resonant and Nonresonant Photoresponses in a Field-Effect Terahertz Detector

Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna

Modeling of graphene photodetector based on photogating effect for circuits simulation

Modeling of antenna-coupled Si MOSFETs in the Terahertz Frequency Range

Heterodyne Detection at 216, 432, and 648 GHz Based on Bilayer Graphene Field-Effect Transistor with Quasi-Optical Coupling

Gate Tuning of Förster Resonance Energy Transfer in a Graphene - Quantum Dot FET Photo-Detector

Two-terminal Terahertz Detectors Based on AlGaN/GaN High-Electron-mobility Transistors