Abstract:The evolution of traditional field effect transistor from planar to three-dimensional (3-D) device structure has led to higher package density and high current drive. However, due to continuous scaling, these non-planar devices (FinFET) have been found to suffer from performance degrading short channel effects (SCEs). In this work, a modified field effect device called dual material gate-all-around FinFET with High-K Gate-Oxide stack and strained channel is presented along with its quasi 3-D analytical model to evaluate the SCE immunity. This surface potential-based model includes gate work-function difference, characteristic gate length and equivalent oxide thickness. The channel potential is derived using quasi-3-D scaling equation where the characteristic length is derived using equivalent number of gates model. With the simple expression of potential distribution, threshold voltage and subthreshold swing have been obtained using minimum central potential. The device immunity to SCEs such as drain-induced barrier lowering, hot carriers and subthreshold degradation has also been examined for various structural and material modifications. The proposed analytical model has been verified using the 3-D numerical device simulator ATLAS.

Analytical Model Including the Fringing-Induced Barrier Lowering Effect for a Dual-Material Surrounding-Gate MOSFET with a High-Κ Gate Dielectric

Fringe-Induced Barrier Lowering (fibl) Included Sub-Threshold Swing Model for Double-Gate Mosfets

An Analytic Model for Channel Potential and Subthreshold Swing of the Symmetric and Asymmetric Double-Gate MOSFETs

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

A 2D Analytical Model for SCEs in MOSFETs with High-K Gate Dielectric

Threshold voltage model for MOSFETs with high-k gate dielectrics

A Two-Dimensional Analytical Model for Short Channel Junctionless Double-Gate MOSFETs

Analytical Model of the Subthreshold Behavior in Short-Channel Junctionless Cylindrical Surrounding-Gate Mosfets

Analytical Gate Fringe Capacitance Model for Nanoscale MOSFET with Layout Dependent Effect and Process Variations

Gate Leakage Analysis of Nano-MOSFETs Using Ensemble Full Band Monte Carlo with Quantum Correction

Analytical Charge-Control and I-V Model for Submicrometer and Deep-Submicrometer MOSFETs Fully Comprising Quantum Mechanical Effects

A Non-Charge-Sheet Analytic Model for Symmetric Double-Gate MOSFETs With Smooth Transition Between Partially and Fully Depleted Operation Modes

A rigorous analytical model for short-channel junctionless double-gate MOSFETs

Analytical Short-Channel Behavior Models of Junctionless Cylindrical Surrounding-Gate Mosfets

Analytical Current Model for Long-Channel Junctionless Double-Gate Mosfets

Gate Underlap Design for Short Channel Effects Control in Cylindrical Gate-all-around MOSFETs Based on an Analytical Model

An Analytical 2D Current Model of Double-Gate Schottky-Barrier MOSFETs

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs from Intrinsic Channel to Heavily Doped Body

An Analytical Potential Model of Double-Gate MOSFETs with Schottky Source/Drain

Quasi-analytical model-based performance analysis of dual material gate stack strained GAA FinFET

Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors