Analytical Model Including the Fringing-Induced Barrier Lowering Effect for a Dual-Material Surrounding-Gate MOSFET with a High-Κ Gate Dielectric

Li Cong,Zhuang Yi-Qi,Zhang Li,Bao Jun-Lin
DOI: https://doi.org/10.1088/1674-1056/21/4/048501
2012-01-01
Chinese Physics B
Abstract:By solving Poisson's equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate (DMSG) metal oxide semiconductor field-effect transistor (MOSFET) with a high-kappa gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering (FIBL) on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-kappa dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.
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