Dimitrios Simatos,Ian E. Jacobs,Illia Dobryden,Małgorzata Nguyen,Achilleas Savva,Deepak Venkateshvaran,Mark Nikolka,Jérôme Charmet,Leszek J. Spalek,Mindaugas Gicevičius,Youcheng Zhang,Guillaume Schweicher,Duncan J. Howe,Sarah Ursel,John Armitage,Ivan B. Dimov,Ulrike Kraft,Weimin Zhang,Maryam Alsufyani,Iain McCulloch,Róisín M. Owens,Per M. Claesson,Tuomas P. J. Knowles,Henning Sirringhaus

Abstract:The susceptibility of organic semiconductor devices to processing‐induced contamination is not well understood. Nuclear magnetic resonance is used to identify contaminants originating from the glovebox atmosphere and laboratory consumables (disposable needles, plastic pipettes, and plastic syringes). After establishing rigorous fabrication protocols, it is demonstrated that even small amounts of contaminants affect the thin‐film processing behavior and the electrical properties of devices. Organic semiconductors are a family of pi‐conjugated compounds used in many applications, such as displays, bioelectronics, and thermoelectrics. However, their susceptibility to processing‐induced contamination is not well understood. Here, it is shown that many organic electronic devices reported so far may have been unintentionally contaminated, thus affecting their performance, water uptake, and thin film properties. Nuclear magnetic resonance spectroscopy is used to detect and quantify contaminants originating from the glovebox atmosphere and common laboratory consumables used during device fabrication. Importantly, this in‐depth understanding of the sources of contamination allows the establishment of clean fabrication protocols, and the fabrication of organic field effect transistors (OFETs) with improved performance and stability. This study highlights the role of unintentional contaminants in organic electronic devices, and demonstrates that certain stringent processing conditions need to be met to avoid scientific misinterpretation, ensure device reproducibility, and facilitate performance stability. The experimental procedures and conditions used herein are typical of those used by many groups in the field of solution‐processed organic semiconductors. Therefore, the insights gained into the effects of contamination are likely to be broadly applicable to studies, not just of OFETs, but also of other devices based on these materials.

Investigation on surface contamination caused by human on phase shifter chip

Investigation on organic contamination on bond-pad of semiconductor micro-chip by TOF-SIMS

Failure Analysis of the Contamination on the Pins of the SOT Packages

Research Status and Progress of Contamination Control in Immersion Liquid System of Immersion Lithography Machine

Optimization of Ion Implanter Hardware for Metal Contamination Reduction

Optimization of approach for metal contamination reduction

An Efficient Metrology to Sense Micro-Metal Contamination in Fine-Pitch Package

Particles Detection and Analysis of Hard Disk Substrate after Cleaning of Post Chemical Mechanical Polishing

Root Cause Analysis and Correction of Single Metal Contact Open-Induced Scan Chain Failure in 90nm node VLSI

On Chip Electrostatic Discharge Protection for MEMS Gas Sensor System

Investigation on Hydrophobicity Transfer Property of Silicone Rubber under Heavy Contamination

Investigation on Electromigration Failure of Phase Shifter

The Effect of Water Droplets on Hydrophobic Contaminated Surface under AC Field Voltage Application

Study on Method and Device Used for Evaluating the Contamination Condition on the Surface of Composite Insulator

Effects of Trace Organic Contamination on Micro–nanostructure-Induced Superhydrophobic Properties

Atomic-scale Study on Particle Movement Mechanism During Silicon Substrate Cleaning Using ReaxFF MD

Investigation on the Iron Contamination Sources during the Fabrication of Polished Silicon Wafers

Investigation of the Multimechanism Laser Cleaning Dynamics for Rough Fused Silica Surfaces with Organic Contaminants: A Computational Simulation and Atomic Analysis.

Discussion on influence of moisture absorption on the reliability of integrated circuit package

Trace Metallic Contamination Analysis on Wafer Edge and Bevel by TXRF and VPD-TXRF

Effects of Processing‐Induced Contamination on Organic Electronic Devices