Abstract:Over the past few decades, lead selenide (PbSe) thin films have been widely utilized in infrared photonic devices owing to their narrow band gap, large exciton Bohr radius, high carrier mobility and large dielectric constant. The doping of PbSe thin films has presented an intriguing possibility for tuning their band gap and absorption spectrum range. In this study, we present a "one-step" synthesis of calcium-doped PbSe thin films using the chemical bath deposition method, aiming to address the challenges associated with complex processes and expensive elements. We investigate the effects of dopant concentration on the crystal structure, optical properties, and photoelectric properties. At a dopant concentration of 5 mmol/L, the preferred (200) peak shifts towards higher angle direction. Upon sensitization with iodine, an iodine-rich PbI 2 phase forms on the top layer of the film, leading to increased barrier heights and efficient electron trapping within the PbI 2 /PbSe structure. Furthermore, we study the resistance as a function of illumination duration in pristine PbSe, PbSe-Ca and PbSe-Ca-I. Our results show that the resistance change rate of PbSe-Ca is 8%, double that of the pristine PbSe. After sensitization, the resistance change rate increases to 13.82–10.6%, which is 4 times higher than that of the pristine PbSe. These findings demonstrate that Ca-doping combined with iodine sensitization can significantly enhance the photoelectric performance of PbSe thin films. This work presents a new opportunity for the application of lead chalcogenides in optoelectronic devices, which undoubtedly generate substantial interest in fundamental investigations of these materials.

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