Measurement of standard Gibbs free energy of formation for Fi 2N 2O

Dong Pengli,Zhang Mei,Guo Min,Wang Xidong
2012-01-01
Abstract:The standard Gibbs free energy of formation for Si 2N 2O was measured by two methods. The first was polarization method with 0.1 MPa of nitrogen pressure, 1 073-1 869 K of temperature, yttria stabilized zirconia as solid electrolyte and Cr-Cr 2gt;0 3gt; as reference electrode. The second was conducted at 1 673 and 1 773 K under balanced oxygen partial pressure controlled by Ni-NiO mixture. Two test results coincide with each other well and they can be described as - fgt; G Θ Si2N2Ogt; =-960.627+0.292T±6.2 (kj. Mol -1), where 1 073 K≤T≤1 869K.
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