Measurement of standard Gibbs free energy of formation for Si2N2O

Pengli Dong,Mei Zhang,Min Guo,Xidong Wanq
DOI: https://doi.org/10.3969/j.issn.1001-1935.2012.03.002
2012-01-01
Refractories
Abstract:The standard Gibbs free energy of formation for Si2N2O was measured by two methods.The first was polarization method with 0.1 MPa of nitrogen pressure,1 073-1 869 K of temperature,yttria stabilized zirconia as solid electrolyte and Cr-Cr2O3 as reference electrode.The second was conducted at 1 673 and 1 773 K under balanced oxygen partial pressure controlled by Ni-NiO mixture.Two test results coincide with each other well and they can be described as ΔfGθSi2N2O=-960.627+0.292T±6.2(kJ·mol-1),where 1 073 K≤T≤1 869 K.
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