Abstract:This study utilized ion implantation to modify the material properties of silicon carbide (SiC) to mitigate subsurface damage during SiC machining. The paper analyzed the mechanism of hydrogen ion implantation on the machining performance of SiC at the atomic scale. A molecular dynamics model of nanoscale cutting of an ion-implanted SiC workpiece using a non-rigid regular tetrakaidecahedral diamond abrasive grain was established. The study investigated the effects of ion implantation on crystal structure phase transformation, dislocation nucleation, and defect structure evolution. Results showed ion implantation modification decreased the extension depth of amorphous structures in the subsurface layer, thereby enhancing the surface and subsurface integrity of the SiC workpiece. Additionally, dislocation extension length and volume within the lattice structure were lower in the ion-implanted workpiece compared to non-implanted ones. Phase transformation, compressive pressure, and cutting stress of the lattice in the shear region per unit volume were lower in the ion-implanted workpiece than the non-implanted one. Taking the diamond abrasive grain as the research subject, the mechanism of grain wear under ion implantation was explored. Grain expansion, compression, and atomic volumetric strain wear rate were higher in the non-implanted workpiece versus implanted ones. Under shear extrusion of the SiC workpiece, dangling bonds of atoms in the diamond grain were unstable, resulting in graphitization of the diamond structure at elevated temperatures. This study established a solid theoretical and practical foundation for realizing non-destructive machining at the atomic scale, encompassing both theoretical principles and practical applications.

Self-irradiation of Thin SiC Nanowires with Low-Energy Ions: a Molecular Dynamics Study

Molecular Dynamics Simulations of Silicon Carbide Nanowires under Single-Ion Irradiation

Ionization-induced annealing of pre-existing defects in silicon carbide

Simulation Study on the Defect Generation, Accumulation Mechanism and Mechanical Response of GaAs Nanowires under Heavy-Ion Irradiation

Structures and Field Emission Characteristics of Ion Irradiated Silicon Nanowire Arrays.

Electron Irradiation Modified Point Defects of SiC Nanoparticles with Tunable High Electromagnetic Wave Absorption

Nano-cutting mechanism of ion implantation-modified SiC: reducing subsurface damage expansion and abrasive wear

Molecular Dynamics Study on the Irradiation-Induced Damage in SiC

Structures and Field Emission Properties of Silicon Nanowire Arrays Implanted with Energetic Carbon Ion Beam.

Ion Irradiation Induced Nucleation and Growth of Nanoparticles in Amorphous Silicon Carbide at Elevated Temperatures

Controlling Electronic Structures by Irradiation in Single-Walled SiC Nanotubes: a First-Principles Molecular Dynamics Study

Intriguing uniform elongation and accelerated radial shrinkage in amorphous SiOx nanowire as purely induced by uniform electron beam irradiation

Molecular dynamics analysis of the influence of ion implantation parameters on ultra-precision machining of silicon carbide

Atomistic Analysis on Implantation Effects of Hydrogen Ions and Copper Ions into 4H-Sic

Damage of Low-Energy Ion Irradiation on Copper Nanowire: Molecular Dynamics Simulation

Modification Mechanism of Collaborative Ions Implanted into 4H-Sic by Atomic Simulation and Experiment

High-Dose Electron Radiation and Unexpected Room-Temperature Self-Healing of Epitaxial SiC Schottky Barrier Diodes

One-step Ion Beam Irradiation Manufacture of 3D Micro/nanopatterned Structures in SiC with Tunable Work Functions

Grain growth of nanocrystalline 3C-SiC under Au ion irradiation at elevated temperatures

Field Emission Properties of Ion Beam Synthesized SiC/Si Heterostructures by MEVVA Implantation

Mechanical tensile behavior-induced multi-level electronic transport of ultra-thin SiC NWs