Abstract:Overvoltage ruggedness is an essential reliability requirement for non-avalanche AlGaN/GaN power devices against inductive transient spikes in the OFF-state breakdown events. In this work, we first report the 3rd-quadrant (i.e. source-to-drain reverse operation) overvoltage ruggedness of the p-gate GaN high-electron-mobility transistors (HEMTs) by performing static current-voltage (I-V) sweeps and dynamic unclamped inductive switching (UIS) experiments. Both experimental results reveal an inferior breakdown performance of the device under 3rd-quadrant blocking conditions, including a low static voltage of 57 V and a dynamic breakdown voltage (BV) of 155 V. In particular, this transient voltage is evidently degraded from 155 V to 114 V (i.e. a 26% reduction) by increasing the load current, which is significantly different from the stable BV (1.4 kV) achieved in the 1st-quadrant dynamic breakdown. Such unusual degradation behavior can be explained by the trapping-related carrier transport mechanism, which is supported by temperature-dependent breakdown characteristics. Further numerical simulations, de-capsulation failure analyses and repeated UIS experiments are carried out to study the failure mechanism and gain insight into the overvoltage capability of the device. These results suggest that the rational design of the p-gate GaN HEMTs with the desired 3rd-quadrant overvoltage ruggedness requires careful consideration, especially in reverse conduction events.

Experimental Study of the Anode Injection Efficiency Reduction of 3.3-Kv-class Npt-Igbts Due to Backside Processes

An Experimental And Numerical Investigation Of Igbt Blocking Characteristics

1.4 kV, 25 A, PT and NPT trench IGBTs with optimum forward characteristics

Optimum Design of 1.4kv Non-Punch-Through Trench Igbts: the Next Generation of High-Power Switching Devices

Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process Parameters

Enhanced On-State Performance Trench IGBT with a Self-Aligned P Base

Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect

A Network Topological Approach-Based Transient 3-D Electrothermal Model of Insulated-Gate Bipolar Transistor

Analysis Of Lifetime Control In High-Voltage Igbts

2-D Modelling and Optimisation of Trench Insulated Gate Bipolar Transistors (TIGBT)

Optimum design of 1.4 kV trench IGBTs-the next generation of high power switching devices

Effects of Current Filaments on IGBT Avalanche Robustness: A Simulation Study

Design and Optimization of Linearly Graded-Doping Junction Termination Extension for 3.3-Kv-class Igbts

A Novel 3300V Trench IGBT with Hole Extraction Structure for Low Power Loss

An Ultralow Loss Insulated Gate Bipolar Transistor with Emitter Dual Injection

Investigation of Breakdown Voltage Degradation in Low-Voltage Narrow Gate Trench MOSFET by Edge Termination Optimization

Gate Field Plate Igbt with Trench Accumulation Layer for Extreme Injection Enhancement

Third Quadrant Overvoltage Ruggedness of P-Gate GaN HEMTs

Simulation study for GaN-based hybrid trench MOS barrier Schottky diode with an embedded p-type NiO termination: increased forward current density and enhanced breakdown voltage

Investigation of the Progressive Gate Breakdown Behaviors in p-GaN Gate HEMTs

A Novel IGBT with SIPOS Pillars Achieving Ultralow Power Loss in TCAD Simulation Study