Abstract:Arc discharge is traditionally used to synthesize randomly arranged graphene flakes. In this paper, we substantially modify it into a glow discharge method so that the discharge current is much more reduced. The H2 and/or Ar plasma etching of the graphitic electrode (used to ignite the plasma) is hence much gentler, rendering it possible to grow graphene in thin film format. During the growth at a few mbar, there is no external carbon gas precursor introduced. The carbon atoms and/or carbon containing particles as a result of the plasma etching are emitted in the chamber, some of which undergo gas phase scattering and deposit onto the metallic catalyst substrates (Cu-Ni alloy thin films or Cu foils) as graphene sheets. It is found that high quality monolayer graphene can be synthesized on Cu foil at 900 °C. On Cu-Ni, under the same growth condition, somewhat more bilayer regions are observed. It is observed that the material quality is almost indifferent to the gas ratios, which makes the optimization of the deposition process relatively easy. Detailed study on the deposition procedure and the material characterization have been carried out. This work reveals the possibility of producing thin film graphene by a gas discharge based process, not only from fundamental point of view, but it also provides an alternative technique other than standard chemical vapor deposition to synthesize graphene that is compatible with the semiconductor planar process. As the process uses solid graphite as a source material that is rich in the crust, it is a facile and relatively cheap method to obtain high quality graphene thin films in this respect.

Hydrogen Flame Synthesis of Few-Layer Graphene from a Solid Carbon Source on Hexagonal Boron Nitride

Synthesis of in-plane and stacked graphene/hexagonal boron nitride heterostructures by combining with ion beam sputtering deposition and chemical vapor deposition

Large scale growth and characterization of atomic hexagonal boron nitride layers.

Rapid microwave synthesis of graphene directly on h-BN with excellent heat dissipation performance.

Flame synthesis of few-layered graphene/graphite films.

Graphene Growth Using a Solid Carbon Feedstock and Hydrogen.

Flame Synthesis of Graphene Films in Open Environments

Graphene growth on h-BN by molecular beam epitaxy

Growth of h-BN/graphene heterostructure using proximity catalysis

Large Scale Graphene/h-Bn Heterostructures Obtained by Direct CVD Growth of Graphene Using High-Yield Proximity-Catalytic Process

High-Yield Proximity-Induced Chemical Vapor Deposition of Graphene Over Millimeter-Sized Hexagonal Boron Nitride

Arc plasma-assisted hydrogenation of few-layer graphene in methane-hydrogen atmospheres

Nucleation and Growth of Single Crystal Graphene on Hexagonal Boron Nitride

Direct growth of few layer graphene on hexagonal boron nitride by chemical vapor deposition

High Quality Graphene Thin Films Synthesized by Glow Discharge Method in A Chemical Vapor Deposition System Using Solid Carbon Source

A Hydrogen-Initiated Chemical Epitaxial Growth Strategy for In-Plane Heterostructured Photocatalyst

Scalable Synthesis of Monolayer Hexagonal Boron Nitride on Graphene with Giant Bandgap Renormalization

Rapid and catalyst-free CVD growth of graphene on hBN

Silane-catalysed fast growth of large single-crystalline graphene on hexagonal boron nitride

A Simple Method to Tune Graphene Growth Between Monolayer and Bilayer

Synthesizing graphenes directly on SiO2/Si in open environments by a dual flame method