Abstract:The development of advanced electronic devices leads to highly miniaturized interconnect circuits (ICs), which significantly increases the electromigration (EM) phenomenon of solder and circuits due to higher current density. The electromigration of solder joints under high current density has become a severe reliability concern in terms of microelectronic product reliability. The microstructure of the solder plays an important role in the electromigration induced degradation. In this study, Sn-3.0Ag-0.5Cu solder bumps with Ni/Au under bump metallization (UBM) layer were fabricated and electromigration acceleration tests were conducted under current density of 1.4 × 104 A/cm2 and 120 °C to investigate the effect of grain structure and Ni/Au-UBM layer on EM-induced failure. Grain structures of solder bumps were determined by utilizing the Electron Backscatter Diffraction (EBSD) technique, and single-crystal solder, single-crystal dominated solder, and polycrystalline solder are observed in different test samples. According to the Scanning Electron Microscope (SEM) images, it is observed that the Ni/Au-UBM layer of the Cu pad can inhibit atom diffusion between solder bump and Cu pad, which reduces the consumption of Cu pad but causes a large void and crack at the interface. The EM lifetime of single crystal solder bumps is lower than that of polycrystalline solder bumps when the c-axis of single crystal solder bumps is perpendicular to the electron flow direction. Additionally, the single crystal structure will increase the brittleness of the solder bump, and cracks are easily generated and expanded under the stress caused by the mismatch of thermal expansion coefficients between the solder bump and Ni/Au-UBM layer near Cu pad. Polycrystalline solder bumps with a higher misorientation angle (15-55°) have a higher atom diffusion rate, which will result in the acceleration of the EM-induced failure.

The Effect of Atomic Density Gradient in Electromigration

A new prediction methodology for electromigration-induced solder degradation in a WL-CSP system

Prediction of Electromigration Failure of Solder Joints and Its Sensitivity Analysis

Electromigration reliability evaluation in FCBGA package based on orthogonal experimental design

Impact of geometry parameter on electromigration reliability in FCBGA package

Comparison of the Time-Dependent Physical Processes in the Electromigration of Deep Submicron Copper and Aluminum Interconnects

Design of experiments of electromigration reliability for solder joints of a wafer level chip scale package

Electromigration Mechanism of Failure in Flip-Chip Solder Joints Based on Discrete Void Formation

Electromigration Simulation for Metal Lines

Phase-Field-Crystal Model for Electromigration in Metal Interconnects.

The Effect of Micro-Structure Evolution in Electromigration on the Reliability of Solder Joints

Interaction Effect Between Electromigration and Microstructure Evolution in BGA Structure Cu/Sn-58Bi/Cu Solder Interconnects

Effect of Grain Structure and Ni/Au-UBM Layer on Electromigration-Induced Failure Mechanism in Sn-3.0Ag-0.5Cu Solder Joints

MODELING OF ELECTROMIGRATION FAILURE PREDICTING FOR FCBGA SOLDER BUMP UNDER MULTI-PHYSICAL FIELD LOADS

Numerical simulation of electromigration failure in IC interconnect structures

Effect of current density and geometry structure on Pb-free solder joints electromigration

Effect of Βsn Grain Orientations on the Electromigration-Induced Evolution of Voids in SAC305 BGA Solder Joints

A NEW ALGORITHM FOR ELECTROMIGRATION FAILURE ANALYSIS OF METAL INTERCONNECTS

Dependence of electromigration caused by different mechanisms on current densities in VLSI interconnects

The Study of the Reliability of Complex Components during the Electromigration Process

Size And Geometry Effects On The Electromigration Behaviour Of Flip-Chip Sn3.5ag Solder Joints