Abstract:Abstract Copper chemical mechanical polishing (CMP) in barrier layer slurries with periodate as oxidant has not been intensively studied. This work presents an investigation into copper tribocorrosion in potassium periodate-based slurries during CMP. The research focused on copper tribocorrosion behavior, the surface chemical and electrochemical reaction products, and the electrochemical mechanism during CMP. The copper surface film was characterized by Raman spectra experiments. Tribocorrosion tests combined with CMP chemical experiments were conducted to study the tribochemical behavior and wear-accelerated corrosion effect. The results show that copper corrosion is more severe in acid solutions than in alkaline conditions. The copper surface is mainly passivated with copper oxides, copper hydroxide, and copper iodide. Small amounts of copper iodate, copper periodate, and iodine could be detected under specific pH conditions. Abrasion could help to get a uniform passivation film on copper surface consisting of copper oxides, copper hydroxide, and copper iodide only. The material loss due to wear-accelerated corrosion during CMP was also investigated. The results show that under weakly alkaline conditions (pH 9 and pH 10), the wear-corrosion effect plays an important role in the total material loss due to corrosion. The wear-accelerated corrosion is mainly caused by the exposure of more cathodic reaction sites to the slurry for participation in the redox reaction and the local galvanic corrosion during the CMP process. The high wear corrosion proportion of the total corrosion (ΔIc/Icc) could help to obtain a better surface quality and desirable material removal rate during CMP.

An Empirical Approach to Explain the Material Removal Rate for Copper Chemical Mechanical Polishing

Material Removal Mechanism of Copper CMP from a Chemical–Mechanical Synergy Perspective

An Investigation on the Chemical Effect in Chemo-Mechanical Polishing

Effect of pH on Material Removal Rate of Cu in Abrasive-Free Polishing

Study on Oxidant in Chemical Mechanical Polishing of Copper

Analytical Modelling of Material Removal in Copper Chemical Mechanical Polishing Incorporating the Scratch Hardness of the Passivated Layer on Copper Thin Film Wafer

A quantitative study of removal mechanism of copper polishing based on a single pad-asperity polishing test

Non-continuum Material Removal Mechanism of Surface Polishing with Ultra Precision

Modeling the Chemical-Mechanical Synergy During Copper CMP

Tribo-chemical Behavior of Copper in Chemical Mechanical Planarization

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling

Material removal mechanism of copper chemical mechanical polishing in a periodate-based slurry

Material Removal Regions in Chemical Mechanical Polishing: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-Pad Contact Area, Part 1

A plasticity-based model of material removal in chemical-mechanical polishing (CMP)

Modification of the Preston equation for the chemical–mechanical polishing of copper

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

Mechanical Model of Nanoparticles for Material Removal in Chemical Mechanical Polishing Process

Chemical processes in the chemical mechanical polishing of copper

The influence of pH and H2O2 on surface quality and material removal rate during W-CMP