Abstract:Bulk PbSnSe has a two-phase region or miscibility gap as the crystal changes from a Van der Waals-bonded orthorhombic 2D layered structure in SnSe-rich compositions to the related 3D-bonded rocksalt structure in PbSe-rich compositions with large contrast in the electrical, optical, and thermal properties across this transition. With an aim to understand and harness this transition in thin films devices, we epitaxially integrate PbSnSe on GaAs by molecular beam epitaxy using an in-situ PbSe surface treatment and show a significantly reduced two-phase region by stabilizing the Pnma layered structure out to Pb$_{0.45}$Sn$_{0.55}$Se, beyond the bulk-limit of Pb$_{0.25}$Sn$_{0.75}$Se. Pushing further, we directly access metastable two-phase epitaxial films of layered and rocksalt grains that are nearly identical in composition around Pb$_{0.5}$Sn$_{0.5}$Se and entirely circumvent the miscibility gap. We present microstructural evidence for an incomplete displacive transformation from rocksalt to layered structure in these films that we speculate occurs during the sample cool down to room temperature after synthesis. In situ temperature-cycling experiments on a Pb$_{0.58}$Sn$_{0.42}$Se rocksalt film reproduce characteristic attributes of a displacive transition and show a modulation in electronic properties. We find well-defined orientation relationships between the phases formed and reveal unconventional strain relief mechanisms involved in the crystal structure transformation, using transmission electron microscopy. Overall, our work adds a scalable thin film integration route to harnessing the dramatic contrast in material properties in PbSnSe across a potentially ultrafast structural transition.

Electron‐beam Induced Phase Transformation in Β‐ag2se Thin Films

Phase Identification and Strong Second Harmonic Generation in Pure Ε-Inse and Its Alloys.

Phase‐Transformation‐Induced Giant Deformation in Thermoelectric Ag 2 Se Semiconductor

Multistage Transformation and Lattice Fluctuation at AgCl-Ag Interface.

Electron-Beam Induced Transformations of Layered Tin Dichalcogenides

Direct Observation of Phase Transition of Gesbte Thin Films by Atomic Force Microscope

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Growth and Structural Characteristics of Metastable Β-in 2 Se 3 Thin Films on H-terminated Si（111） Substrates by Molecular Beam Epitaxy

Electron beam lithography of GeTe through polymorphic phase transformation

Modulation of opto-electronic properties of InSe thin layers via phase transformation

Phase Transition of Gesbte Thin Films Induced by Thermal Treatment and Laser Irradiation

In situ study of crystal plane-dependent interfacial structural transformation in AgBiS 2

Thermal And Laser-Induced Phase-Transformation In Rf-Sputtered Gesb2te4 Thin-Films

Morphological Control of 2D Hybrid Organic-Inorganic Semiconductor AgSePh

METASTABLE PHASE FORMATION AND STRUCTURAL-CHANGE CHARACTERISTICS OF VAPOR-DEPOSITED SEMICONDUCTOR-FILMS

In Situ Observation of Heat-Assisted Hexagonal-Orthorhombic Phase Transitions in Se/Ag/Se Sandwiched Structures and Their Effects on Optical Properties

Phase Evolution and Amorphous Stability upon Solid-State Reaction in Superlattice-Like Ge–Sb–Te Combinatorial Thin Films

Phase Tailoring of In2Se3 Toward van der Waals Vertical Heterostructures via Selenization of γ‐InSe Semiconductor

In situ crystallization of amorphous Sb2Se3 films at electron beam irradiation

Electrochemical Preparation of Silver Selenide Films and Nanowires from Aqueous Solutions

Expanded stability of layered SnSe-PbSe alloys and evidence of displacive phase transformation from rocksalt in heteroepitaxial thin films