Abstract:The combination of ultrathin-barrier (UTB) AlGaN (<; 6 nm)/GaN heterostructure and a charge-modulated SiNx grown by low-pressure chemical vapor deposition (LPCVD) is a promising technique for development of GaN-based millimeter-wave power amplifiers and recessfree enhancement-mode (E-mode) power switches. The LPCVD-SiN x passivation is capable of inducing high density of positive charges at the SiN x /(Al)GaN interface (~3.50 × 10 13 cm -2 ), ensuring efficient recovery of 2-D electron gas (2-DEG) density that is comparable with conventional AlGaN/GaN heterostructure. Temperature-dependent Hall measurements and scattering mechanism simulations confirm the positive interfacial charges as well as interface states with density below 10 13 cm -2 and exert weak remote coulombic scattering of 2-DEG in metal-insulator- semiconductor heterojunction field-effect transistors (MIS-HFETs), which warrants a low ON-resistance of UTBAlGaN/GaN-based devices. UTB-AlGaN (<; 6 nm)/GaN heterostructure with LPCVD-SiN x passivation is a compelling technology platform for fabrication of high-frequency power amplifiers and high-efficiency E-mode power switches.

Field Control Energy-Band (FCE) Technology for GaN-Based Heterostructure Power Devices

Ferroelectric domain modulated AlGaN/GaN field effect transistor

GaN-based E-mode p-FETs with polarization-doped p-Type graded AlGaN channels

A Variable Nanotrench Structure for Electric Field Modulation in AlGaN/GaN Devices

Enhancement-mode N-Gan Gate P-Channel Heterostructure Field Effect Transistors Based on GaN/AlGaN 2D Hole Gas

HyFET—A GaN/SiC Hybrid Field-Effect Transistor

Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode.

A Novel GaN:C Millimeter-Wave HEMT with AlGaN Electron-Blocking Layer

Polarization-Assisted Acceptor Ionization in E-Mode GaN P-Fet on 650-V E-mode P-Gan Gate HEMT (EPH) Platform

Hetero-integration of Quasi Two-Dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and Non-Volatile Modulation of Two-Dimensional Electron Gas

High Threshold Voltage Stability Enhancement-Mode GaN p-FETs Fabricated With PEALD-AlN Gate Interfacial Layer

Planar Integration of E/D-mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment

2Deg-Concentration-modulated High-Power-Density AlGaN/GaN RF HEMTs

Optimization of Two-Dimensional Electron Gases and I–V Characteristics for AlGaN/GaN HEMT Devices

Two-photon Process in F Treated AlGaN/GaN Heterojunction HEMT Device

A novel AlGaN/GaN HEMTs technology for intelligent electric network application

Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure

Investigation on the sources of 2DEG in AlxGa1-xN/GaN HEMT

Integration of Ferroelectrics with III-N Transistors for High Performance Millimeter-Wave Applications

Ferroelectric Field Effect Transistor with A Double-Gate Structure on Algan/Gan Heterostructures