Abstract:In this paper, we take advantage of the high sensitivity of two-dimensional electron gas concentration in the heterojunction channel of a GaN high electron mobility transistor (HEMT) to device surface states and gate voltages. By integrating a HEMT with ferroelectric materials with photovoltaic effects, a photo-sensitive gate HEMT photodetector based on ferroelectric integration is obtained. By exploring the ferroelectric and composite film sputtering growth epitaxial atmosphere, a high-performance PZT/ZnO composite ferroelectric film grown in an oxygen-containing atmosphere is obtained. Comparing the PZT and LiNbO3 (LN) ferroelectric thin films prepared with or without the buffer layer, the following conclusions are obtained. The quantum efficiency of the PZT/ZnO film increases by 240% and 596% at the peak of 300–400 nm, reaching 14.55%; the residual polarization of the PZT film obtained in an oxygen-containing atmosphere reaches 52.31 μC/cm2; the PZT/ZnO composite film has better fatigue characteristics. The GaN HEMT detector prepared by using magnetron sputtered PZT/ZnO as the sensing gate under the oxygen atmosphere has a photocurrent increment of 11.51 mA under ultraviolet light and a responsivity of 111A/W at 365 nm. At the same time, the device has τr = 0.12 s and τf = 8.3 s transient response. The research in this paper shows that a new structure photodetector based on a GaN HEMT has excellent ultraviolet light response, which provides a new research direction for the light detection mechanism.

Two-photon Process in F Treated AlGaN/GaN Heterojunction HEMT Device

Two-photon process in F treated AlGaN/GaN heterojunction HEMT device

AlGaN/GaN Heterostructures for Non-Invasive Cell Electrophysiological Measurements.

Fluorine Plasma Treatment for AlGaN/GaN HEMT-Based Ultraviolet Photodetector with High Responsivity and High Detectivity

Characterization of Fluorine‐plasma‐induced Deep Centers in AlGaN/GaN Heterostructure by Persistent Photoconductivity

Field Control Energy-Band (FCE) Technology for GaN-Based Heterostructure Power Devices

High sensitivity AlGaN/GaN lateral fieldeffect rectifier for zero-bias microwave detection

Two-terminal Terahertz Detectors Based on AlGaN/GaN High-Electron-mobility Transistors

Transient Current Spectroscopy of Lattice Matched Inaln/Aln/Gan Hfets for Identification of Traps Resulting in Gate Lag

Investigation of proton irradiation induced E<sub>C</sub>-0.9 eV traps in AlGaN/GaN high electron mobility transistors

Research on photosensitive gate ferroelectric integrated GaN HEMT photodetector

Current Drops in CF4 Plasma-Treated AlGaN/GaN Heterojunction in Polar Gas Ambient

Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation

Persistent Photoconductivity and Carrier Transport in AlGaN∕GaN Heterostructures Treated by Fluorine Plasma

2-Mercaptobutanedioic-Acid-Modified AlGaN/GaN High Electron Mobility Transistor With Folded Gate for Fe3+ Detection

Photo-stimulated Current Spectroscopy and Its Application in Detecting Aluminum Implantation-Induced Deep Traps in GaN

The Dynamic Modulation Doping Effect of Gas Molecules on an AlGaN/GaN Heterojunction Surface

The Sensing Mechanism of InAlN/GaN HEMT

Modulation of Polarization Field by Fluorine Ions in Algan/Gan Heterostructures Revealed by Positron Annihilation Spectroscopy

Detection of Halide Ions with AlGaN∕GaN High Electron Mobility Transistors

Investigation on Fe-Doped AlGaN/GaN HEMT at 148 GHz Using E-FPL Technology for High-Frequency Communication Systems