Research on design of low-leakage SRAM cells for FPGA

Liewen Li,Weihua Gui
DOI: https://doi.org/10.3772/j.issn.1002-0470.2012.12.012
2012-01-01
Abstract:Aiming at the increasingly serious power dissipation problem of field programmable gate arrays (FPGA) caused by their growing integration and speed, the paper proposes a new design method for low power static random access memory(SRAM)suitable for FPGA. According to the characteristic that most SRAM cells store "0" when FPGA is configured and based on the analysis of the sources of main leakage current when SRAM cells store "0", the proposed method reduces the leakage power dissipation of SRAM cells when the cells store "0" by using the dual threshold voltage technique and the dual oxide thickness technique. The method has the advantage of improving the static noise margin of SRAM without increasing the circuit delay and area. The simulation results show that the leakage power of the SRAM cell designed with the new design method can be reduced by more than 41.32% of that of conventionally designed SRAM cells while maintaining other performance.
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