Abstract:The configurations of core/shell nanowires (NWs) and quantum dots (QDs) decorating NWs have found great applications in forming optoelectronic devices thanks to their superior performances. The combination of the two configurations would expect to bring more benefits, however, the nanometer-scale electrostatic properties of the QD/buffer layer/NW heterostructures are still unrevealed. In this study, the InAs QDs decorating GaAs/AlAs core/shell NWs are systemically studied both experimentally and theoretically. The layered atomic structures, chemical information, and anisotropic strain conditions are characterized by comprehensive transmission electron microscopy (TEM) techniques. Quantitative electron holography analyses show a large number of electrons accumulating in the InAs QD, especially at the dot apex, and charges of reversed signs and similar densities are observed to distribute at the sequential interfaces, leaving great amounts of holes in the NW core. Theoretical calculations including simulated heterostructural band structures, interfacial charge transfer, and chemical bonding analysis are in good accordance with the experimental results, and prove the important role of the AlAs buffer layer in adjusting the heterostructural band structure as well as forming stable InAs QDs on the NW surfaces. These results could be significant for achieving related optoelectronic devices with better stability and higher efficiency.

Enhanced Tunneling in the GaAs P+–n+junction by Embedding InAs Quantum Dots

Highly symmetric and tunable tunnel couplings in InAs/InP nanowire heterostructure quantum dots

Design of AlInAs/InP Tunnel Junction and Its Application in Devices

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Electron Resonant Tunneling Through Inas/Gaas Quantum Dots Embedded in A Schottky Diode with an Alas Insertion Layer

Resonant Tunnelling Via Inas Self-Organized Quantum Dot States

Incorporation of random alloy GaBi$_{x}$As$_{1-x}$ barriers in InAs quantum dot molecules: alloy strain and orbital effects towards enhanced tunneling

Temperature-Dependent Carrier Tunneling for Self-Assembled Inas/Gaas Quantum Dots with A Gaasn Quantum Well Injector

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.

Metastable state involved resonant tunneling through single InAs/GaAs quantum dot

Characteristics of InAs/GaSb Line-Tunneling FETs with Buried Drain Technique

Carrier Tunneling Effects on the Temperature Dependent Photoluminescence of Inas/Gaas Quantum Dot: Simulation and Experiment

Emission Rates for Electron Tunneling from InAs Quantum Dots to GaAs Substrate

InAs Quantum Dots for Quantum Information Processing

A Low Resistivity N++-Ingan/p++-gan Polarization-Induced Tunnel Junction

Electron-hole interactions in coupled InAs-GaSb quantum dots based on nanowire crystal phase templates

Study of Nanometer-Scale Structures and Electrostatic Properties of InAs Quantum Dots Decorating GaAs/AlAs Core/shell Nanowires

Coulomb Blockade and Resonant Tunnelling in Etched and Regrown Ga0.25in0.75as/Inp Quantum Dots

Direct Injection Tunnel Spectroscopy of a P-N Junction

Electrical Characteristics of InAs Self-Assembled Quantum Dots Embedded in GaAs Using Admittance Spectroscopy

Electronic Coupling in Nanoscale InAs/GaAs Quantum Dot Pairs Separated by a Thin Ga(Al)As Spacer.