Abstract:Antimony selenide (Sb2Se3) is currently considered as a kind of promising candidate material for photovoltaic and photoelectric devices, but there is still a large practical application challenge due to its low electrical conductivity and low charge carrier density. To overcome such problems, we adopt a homogroup Bi/Sb strategy to prepare Bi-doped Sb2Se3 semiconductors. According to the XRD, XPS, and TEM results, the Bi/Sb lattice substitution was evidenced in the grown (BixSb1–x)2Se3 crystals. Moreover, the doped crystals have a direct band gap from 1.07 to 1.14 eV with different Bi contents, which allows a strong absorption of the solar spectrum. Hall test results and DFT calculation then witness the semiconductive-type alternation from p-type (at a low Bi concentration with Sb vacancies as acceptors) to n-type (at a high Bi concentration with Se vacancies as donors). With the increased carrier concentration under Bi doping, the electrical conductivity and photoresponse have been greatly improved. The (BixSb1–x)2Se3 crystals then presented enhanced photocurrent density with fast response/recovery time (0.05 s/0.03 s) as well as long-term durability. The (BixSb1–x)2Se3-based FTO/CdS/(BixSb1–x)2Se3/Au solar cell eventually achieved a 62% improvement in device efficiency compared with the pure Sb2Se3-based one. It thus demonstrated an efficient homogroup Bi/Sb substitution strategy to enhance the performance of Sb2Se3-based photoelectric devices.

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