Abstract:This paper proposes a novel LDMOS structure with ultra-shallow trench isolation (USTI) and p-buried layer in 0.18um BCD technology platform. This platform offers 18V to 40V LDMOS devices which has best-in-class specific on-resistant (R on, sp ) with respect to similar technologies. USTI structure is implemented in LDMOS drift region to reduce specific on-resistance (R on, sp ) by shortening the current flow path and smooth the surface electric field. Meanwhile P-buried layer is introduced to assist depletion and enhance the charge density of drift region, which reduces R on, sp further and keep higher breakdown. The R on, sp of proposed USTI-LDMOS devices is very competitive, 18V LDMOS has BV DSS =27V and R on, sp =7.1 mΩ·mm 2 ; 20V LDMOS has BV DSS =30V and R on, sp =8.8mΩ·mm 2 ; 30V LDMOS has BV DSS =42V and R on, sp =14.5mΩ·mm 2 ; 40V LDMOS has BV DSS =52V and R on, sp =20.5mΩ·mm 2 .

Universal Trench Design Method for a High-Voltage SOI Trench LDMOS

A novel double-gate trench SOI LDMOS with double-dielectric material by TCAD Simulation Study

4H-Sic Trench Gate Lateral MOSFET with Deep-Shallow Source Trench for Improved RESURF Dose Window and Reduced Oxide Field

Best-in-class LDMOS with ultra-shallow trench isolation and p-buried layer from 18V to 40V in 0.18μm BCD technology

Field Plate-Adaptive Doping: A Novel Surface Electric Field Optimization Technique for SOI LDMOS With Gate Field Plate

Ultra-Low On-Resistance SiC LDMOS With Separated-Protected Trench Gates and Trench RESURF Technology

A 600V-Class Partial SOI LDMOS with Step-Doped Drift Region

3-D analytical model of the high-voltage interconnection effect for SOI LDMOS

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

Design and optimization of a novel SOI LDMOS structure using PIN junction

A New Shallow Trench and Planar Gate Mosfet Structure Based on Vdmos Technology

Determining the Performance Limits of LDMOS With Three Common Types of Field Oxides

Trench angle: a key design factor for a deep trench superjunction MOSFET

A Novel SiC LDMOS with Electric Field Optimization by Step Doping Technology

4H-Sic Trench Gate Lateral MOSFET with Dual Source Trenches for Improved Performance and Reliability

A New 600V Partial SOI LDMOS with Step-Doped Drift Region

Improved Model on Buried-Oxide Damage Induced by Total-Ionizing-Dose Effect for HV SOI LDMOS

Novel Void Embedded Design for Total Ionizing Dose Hardening of Silicon-on-Insulator MOSFET

Enhancement of Electrical Safe Operation Area of 60 V nLDMOS by Engineering of Reduced Surface Electrical Field in the Drift Region

Realization of 850 v breakdown voltage LDMOS on Simbond SOI

Numerical Investigation of Transient Breakdown Voltage Enhancement in SOI LDMOS by Using a Step P-Type Doping Buried Layer