In-situ Raman monitoring of stress evaluation and reaction in Cu 2O oxide layer

YaoTing Zheng,Fuzhen Xuan,Zhengdong Wang
DOI: https://doi.org/10.1016/j.matlet.2012.03.015
IF: 3
2012-01-01
Materials Letters
Abstract:A series of in-situ Raman measurements of oxygen reaction on a thin Cu film at 300°C were performed to monitor the oxide layer growth and the stress evolution within this layer. The Raman data revealed a phenomenon of stress relaxation as well as the generation of growth stress. Ex-situ atomic force microscope (AFM) was employed to assess the surface morphology of Cu film before and after the oxygen reaction. 3D nano oxide islands were observed on the oxide surface. A growth model for the oxide layer was proposed based on Stranski-Krastonov epitaxy. This model interpreted the mechanism of stresses relaxation in the oxide layer at nano level. Finally, the oxidation kinetics was analyzed qualitatively in terms of the Raman data.
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