Abstract:As the device size continues to shrink, the gate oxygen layer in MOS devices continues to become thinner, which leads to problems such as increased leakage current in conventional Si MOS devices. SiC, an important semiconductor material used in high-power devices, is not immune to the problem of premature breakdown due to the gate oxygen layer. Based on this, this paper adopts the innovative approach of replacing the conventional SiO 2 as the gate oxygen layer with the high-k material, hafnium dioxide (HfO 2 ), and continues the in-depth study on the electrical characteristics of the gate oxygen structure. In this paper, hafnium dioxide (HfO 2 ) thin films were deposited on SiC and Si substrates using the atomic layer deposition(ALD) method. The metal-insulated semiconductor (MIS) structures with Al as the upper and lower electrodes were prepared, and the leakage currents and breakdown voltage characteristics of the MOS capacitors on the two different substrates were investigated. The leakage current density of the MOS capacitor structure with SiC substrate is 10 -11 A/cm 2 ,and the breakdown voltage is about 32 V. Based on the capacitance-voltage (C-V) measurements, the frequency dependence of the movable charge at the interface of the MOS capacitor structure is investigated. The lowest interfacial defect density (D it ) of the MOS capacitive structure with SiC substrate is only of the order of 10 10 eV -1 cm -2 , while the movable charge N eff of the oxide layer of this sample is also controlled to the order of 10 13 cm -2 . It is worth mentioning that the HfO 2 /SiC structure performs better than the HfO 2 /Si structure in these electrical parameters, and the sample designed in this paper also performs better in electrical parameters than previous studies. These results undoubtedly demonstrate that the combination of High-k material (HfO 2 ) and SiC in the MOS gate oxygen layer is a promising research topic.

Study of the Key Technologies of SiC MOS Devices

Electrical characterization of near-interface traps in thermally oxidized and NO-annealed SiO2/4H-SiC metal-oxide-semiconductor capacitors

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Ohmic Contact Characteristics of Silicon Carbide-based MEMS Devices

Interface Properties Study on SiC MOS with High-Κ Al2O3 Gate Dielectric

Reliability and Stability Improvement of MOS Capacitors via Nitrogen-Hydrogen Mixed Plasma Pretreatment for SiC Surfaces

Enhanced Quality of Al2O3/SiC Gate Stack Via Microwave Plasma Annealing

Electrical Characterization of HfO2/4H-SiC and HfO2/Si MOS Structures

Enhanced Interfacial and Electrical Characteristics of 4H-Sic MOS Capacitor with Lanthanum Silicate Passivation Interlayer

4H-SiC Ohmic Contact and Measure Technology

4H-SiC Ohmic contacts formation by MoS2 layer intercalation: A first-principles study

Formation Mechanism, Interface Characteristics and the Application of Metal/sic Thin-Film Ohmic Contact after High-Temperature Treatment

The Study of Physical and Irradiation Properties of SiO_2/SiC Interface

Interface Properties Study On Sic Mos With High-Kappa Al2o3 Gate Dielectric

Improving Interface Quality of 4H-Sic MOS Devices with High Temperature Oxidation Process in Mass Produce Furnace

Recent Progress in Ohmic Contacts to Silicon Carbide for High-Temperature Applications

Comparative study of electrical characteristics for n-type 4H–SiC planar and trench MOS capacitors annealed in ambient NO

Interface Properties Study on SiC MOS with High-K Hafnium Silicate Gate Dielectric

Lowering of interface state density between deposited gate oxide and SiC substrate via controlling substrate oxidation

The Ohmic Contact of 4H-Sic Power Devices by Pulse Laser Annealing and Rapid Thermal Annealing

Mechanism of Reduction of Interface-State Density in the SiC/Metal Contact by Hydrogenation