Abstract:Subsurface damage (SSD) produced in a grinding process will affect the performance and operational duration of single-crystal silicon. In order to reduce the subsurface damage depth generated during the grinding process by adjusting the process parameters (added), experiments were designed to investigate the influence of machining factors on SSD. This included crystal orientation, diamond grit size in the grinding wheel, peripheral speed of the grinding wheel, and feeding with the intention to optimize the parameters affecting SSD. Compared with isotropic materials such as glass, we considered the impact of grinding along different crystal directions and on subsurface damage depth (added). The Magnetorheological Finishing (MRF) spot technique was used to detect the depth of SSD. The results showed that the depth of SSD in silicon increased with the size of diamond grit. SSD can be reduced by either increasing the peripheral speed of the grinding wheel or decreasing the feeding rate of the grinding wheel in the crystal orientation, if the same size of diamond grit was employed. In addition, we proposed a modified model around surface roughness and subsurface crack depth, which considered plastic and brittle deformation mechanisms and material properties of different crystal orientations. When the surface roughness (R-Z) exceeded the brittle-plastic transition's critical value R-ZC (R-ZC > 1.5 mu m, R-ZC > 0.8 mu m), cracks appeared on the subsurface. The experimental results were consistent with the predicted model, which could be used to predict the subsurface cracks by measuring the surface roughness. However, the model only gives the approximate range of subsurface defects, such as dislocations. The morphology and precise depth of plastic deformation subsurface defects, such as dislocations generated in the fine grinding stage, needed to be inspected by transmission electron microscopy (TEM), which were further studied.

Study on the Surface and Subsurface Integrity of Ground Monocrystalline Silicon Wafers

Studies on the Surface Quality of the Unsteady-State Grinding Technique

Raman Microspectroscopy Study on the Ground Surface of Monocrystalline Silicon Wafers

Microstructure Studies of the Grinding Damage in Monocrystalline Silicon Wafers

Study on Subsurface Damage Model of the Ground Monocrystallinge Silicon Wafers

Experimental investigation on subsurface damage depth of ground silicon wafers in wafer-rotating grinding

Formation of Subsurface Cracks in Silicon Wafers by Grinding

Phase transformations of grinding monocrystalline silicon wafer surfaces

Ductile deformation and subsurface damage evolution mechanism of silicon wafer induced by ultra-precision grinding process

The Influence of Crystal Orientation on Subsurface Damage of Mono-Crystalline Silicon by Bound-Abrasive Grinding

Subsurface Damage Distribution in Silicon Wafers Ground with Wafer Rotation Grinding Method

Sensitivity Analysis of the Surface Integrity of Monocrystalline Silicon to Grinding Speed with Same Grain Depth-of-cut

Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

The Influence of Subsurface Damage Depth on Fracture Strength of Ground Silicon Wafers

Analytical modeling of grinding-induced subsurface damage in monocrystalline silicon

High surface integrity fabrication of silicon wafers using a newly developed nonwoven structured grind-polishing wheel

Elimination of Surface Scratch/texture on the Surface of Single Crystal Si Substrate in Chemo-Mechanical Grinding (CMG) Process

Surface Integrity and Removal Mechanism of Chemical Mechanical Grinding of Silicon Wafers Using a Newly Developed Wheel

Investigation on surface generation mechanism of single-crystal silicon in grinding: Surface crystal orientation effect

Surface/subsurface Observation and Removal Mechanisms of Ground Reaction Bonded Silicon Carbide

Surface Characteristics and Material Removal Mechanisms During Nanogrinding on C-face and Si-face of 4H-Sic Crystals: Experimental and Molecular Dynamics Insights