Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

A Study on Formation and Elimination of Fogging in LPCVD Poly Si Films

Analysis of Fogging During Deposition of Polysilicon Thin Film in LPCVD System

Preparation of Anti-Reflective and Protective Diamond-Like Carbon Film on Si Substrate by Femto-Second Pulsed Laser Deposition

Modeling Of Two-Dimensional Dynamic Temperature Distribution Of A Lpcvd Process And Control Design By Mpc

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

Particle contaminations in LPCVD polysilicon

Low-Temperature Floating Plasma Oxidation of Poly-SiGe

Preparation Progress on Low Temperature Polysilicon Films

Low temperature synthesis and formation mechanism of dense SiC coating layer by fluidized bed chemical vapor deposition

Simulation and Experimental Verification of Silicon Dioxide Deposition by PECVD

Performance Improvement of Low-Temperature Polycrystalline Silicon Thin-Film Transistors with Fluorinated Silicate Glass Drive-In Masking Layer

A New Method for the Ultra-smooth Machining of the Silicon Based Materials

Application of Atmospheric Pressure Plasma in the Ultrasmooth Polishing of SiC Optics

Synthesis and Characterization of LPCVD Polysilicon and Silicon Nitride Thin Films for MEMS Applications

Maskless atmospheric pressure PECVD of SiOx films on both planar and nonplanar surfaces using a flexible atmospheric microplasma generation device

Low-cost preparation of multifunctional anti-fog coating with double-layer composite structure

A Wet Process to Form Silicon Oxide Thin Layer for Through Silicon Via Application

Communication—A Strategy to Reduce the Content of Residual Oxide Layer on SiC Surface in ECMP

Investigation on femtosecond laser combined with dynamic wet etching machining of SiC/SiC

Technology control and properties of PECVD SiON films and its potential applications

Facile Fabrication and Antifogging Test of a Calcination-Free SiO_2 Superhydrophilic Coating