Abstract:Chemical mechanical polishing (CMP) is a well-known technology that can produce surfaces with outstanding global planarization without subsurface damage. A good CMP process for Silicon Carbide (SiC) requires a balanced interaction between SiC surface oxidation and the oxide layer removal. The oxidants in the CMP slurry control the surface oxidation efficiency, while the polishing mechanical force comes from the abrasive particles in the CMP slurry and the pad asperity, which is attributed to the unique pad structure and diamond conditioning. To date, to obtain a high-quality as-CMP SiC wafer, the material removal rate (MRR) of SiC is only a few micrometers per hour, which leads to significantly high operation costs. In comparison, conventional Si CMP has the MRR of a few micrometers per minute. To increase the MRR, improving the oxidation efficiency of SiC is essential. The higher oxidation efficiency enables the higher mechanical forces, leading to a higher MRR with better surface quality. However, the disparity on the Si-face and C-face surfaces of 4H- or 6H-SiC wafers greatly increases the CMP design complexity. On the other hand, integrating hybrid energies into the CMP system has proven to be an effective approach to enhance oxidation efficiency. In this review paper, the SiC wafering steps and their purposes are discussed. A comparison among the three configurations of SiC CMP currently used in the industry is made. Moreover, recent advances in CMP and hybrid CMP technologies, such as Tribo-CMP, electro-CMP (ECMP), Fenton-ECMP, ultrasonic-ECMP, photocatalytic CMP (PCMP), sulfate-PCMP, gas-PCMP and Fenton-PCMP are reviewed, with emphasis on their oxidation behaviors and polishing performance. Finally, we raise the importance of post-CMP cleaning and make a summary of the various SiC CMP technologies discussed in this work.

Communication—A Strategy to Reduce the Content of Residual Oxide Layer on SiC Surface in ECMP

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Electro-Chemical Mechanical Polishing of 4H-SiC for Scratch-Free Surfaces with Less Oxide Layer at High Efficiency

Oxidation Anisotropy of 4H-Sic Wafers During Chemical-Mechanical Polishing

Selective electrochemical mechanical polishing of 4H–SiC surface employing porous material impregnated with electrolyte

Charge Utilization Efficiency and Side Reactions in the Electrochemical Mechanical Polishing of 4H-SiC (0001)

Electrochemical mechanical polishing of 4H-SiC (0001) with different grinding stones

Improvement in chemical mechanical polishing of 4H-SiC wafer by activating persulfate through the synergistic effect of UV and TiO2

Recent Advances In Silicon Carbide Chemical Mechanical Polishing Technologies

Enhancing Ceria Slurry Performance for Shallow Trench Isolation Chemical Mechanical Polishing Through Non-Ionic Surfactant Addition

Novel photoelectrochemically combined mechanical polishing technology for scratch-free 4H-SiC surface by using CeO2-TiO2 composite photocatalysts and PS/CeO2 core/shell abrasives

Surface modulation to enhance chemical mechanical polishing performance of sliced silicon carbide Si-face

Oxidation differences on Si- versus C-terminated surfaces of SiC during planarization in the fabrication of high-power, high-frequency semiconductor device

Combination of Plasma Electrolytic Processing and Mechanical Polishing for Single-Crystal 4H-SiC

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Recent Advances in Chemical Mechanical Polishing Technologies of Silicon Carbide

Mechanism of chemical and mechanical mutual promotion in photocatalysis-assisted chemical mechanical polishing for single-crystal SiC

Tribo-Electrochemical Performance of Polycrystalline Silicon during ECMP Simulating Process

Material Removal Rate of 4H-Sic Polishing with Polystyrene/CeO2Core/shell Abrasives

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)