Deposition and Electrical Properties of PLZT Ferroelectric Thin Films on ITO Glass Substrate

LIU Guo-ying,LIU Zu-li,LIU Qing,LIU Hong-ri

DOI: https://doi.org/10.3969/j.issn.1001-2028.2006.02.015

2006-01-01

Abstract:La-doped PbZr0.5Ti0.5O3(PLZT) ferroelectric thin films were prepared on Sn-doped In2O3(ITO) substrates by sol-gel process.The ferroelectric,dielectric and insulating properties of the deposited thin films with different La contents were investigated.The results show that at an applied electric field of 15 V,the remnant polarization Pr and coercive field Ec of the 5%(mole fraction) La-doped PLZT thin film sintered at 650℃ are 35.4×10–6 C/cm2 and 111×103 V/cm,respectively.At a frequency of 1 kHz,the dielectric constant and loss factor of the PLZT thin film are 984 and 0.07,respectively.The leakage current density of the PLZT film is no more than 10–8 A/cm2 at the applied voltage of 9 V.