Abstract:Semiconductors are promising in photoelectric and thermoelectric devices, for which the thermal transport properties are of particular interest. However, they have not been fully understood, especially when crystalline imperfections are present. Here, using cadmium telluride (CdTe) as an example, we illustrate how grain boundaries (GBs) affect the thermal transport properties of semiconductors. We develop a machine-learning force field from density functional theory calculations for predicting the lattice thermal conductivity (LTC) via equilibrium molecular dynamics simulations. The LTC of crystalline CdTe decreases with the relationship of κL∼1/T in the simulation temperature range of 300 – 900 K, in which the isotropic LTC decreases from 3.34 to 0.23 W/(m⋅K) due to the enhanced anharmonicity. More important, after introducing GBs, the LTC is suppressed in all directions, especially in the direction normal to the GB planes. More severe LTC suppression occurs in CdTe with Σ9 GB than that with Σ3 GB at 300 K, decreasing by 92.8% and 61.4% along the direction normal to the GB planes compared to the isotropic LTC of the crystalline CdTe, respectively. The decreased LTC is consistent with the weaker bonding near GB planes and lower shear modulus of the defective material. The analyses of the phonon dispersion curves, vibrational density of states, and phonon participation ratio indicate that the decreased LTC mainly arises from phonon scattering at GBs. Overall, our work highlights that GBs can greatly influence the LTC of semiconductors, thus providing a promising approach for thermal property design.

Study of Dislocations in Cdznte Single Crystals

Preface of 16th International Conference on Defects, Recognition, Imaging and Physics in Semiconductors

Molecular Dynamics Studies of Dislocations in CdTe Crystals from a New Bond Order Potential

Characterization Properties of CdZnTe Wafers

Observation of Thermal-Misfit Strain Relaxation in A Pbte Semiconductor Grown on Cd0.96zn0.04te(111)

Contributions of point defects, chemical disorder, and thermal vibrations to electronic properties of Cd(1-x)Zn(x)Te alloys

Tailoring the defects and resistivity in CdZnTe single crystal via one-step annealing with CdTe compound

Unraveling the Hall-Petch to Inverse Hall-Petch Transition in Nanocrystalline CdTe

Enhanced performance CdZnTe single crystal with few surface damages via solution based annealing

Grain Boundaries Induce Significant Decrease in Lattice Thermal Conductivity of CdTe

Impurity–defect emission from undoped Cd1–x Zn x Te single crystals near the fundamental absorption edge

Characterization of Structural Defects in (Cd,Zn)Te Crystals Grown by the Travelling Heater Method

Study on Micro-Structural Properties of Pbte/Cd0.98zn0.02te (111) Hetero-System Grown by Molecular-Beam Epitaxy

Two-Dimensional Electron Gas at the Metastable Twisted Interfaces of Cdte/Pbte (111) Single Heterojunctions

X-ray Study on the Defects Induced by Cd-doped InSb

Photoluminescence of Dislocations in Czochralski Silicon Induced During Crystal Growth

Characterization of Cdznte Crystals by Resistivity Measurements and Chemical Etching

High Strain Gradient Plasticity Associated with Wedge Indentation into Face-Centered Cubic Single Crystals: Geometrically Necessary Dislocation Densities

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Investigation about Elliptical Region Observed on CdZnTe Wafers after Etching Treatment

On the structural evolutionary behavior of the CdTe/HgCdTe interface during the annealing process