Abstract:Super-reduced phases (SRPs), such as silicon carbide (SiC) and metal silicides, have increasingly been reported in various geological environments. However, their origin remains controversial. SRP inclusions (e.g., metal silicides and metallic silicon (Si0)) within SiC are commonly believed to indicate a natural origin. Here, we identified an unusual SRP assemblage (SiC, (Fe,Ni)Si2, and Si0) in situ in an H5-type Jingshan ordinary chondrite. Simultaneously, our analysis showed that the SiC abrasives contain (Fe,Ni)Si2 and Si0 inclusions. Other inclusions in the artificial SiC were similar to those in natural SiC (moissanite) reported in reference data, including diverse metal silicides (e.g., FeSi, FeSi2, Fe3Si7, and Fe5Si3), as well as a light rare earth element-enriched SiO phase and Fe-Mn-Cr alloys. These inclusions were produced by the in situ reduction of silica and the interaction between Si-containing coke and hot metals during the synthesis of the SiC abrasives. The results demonstrate that the SRP assemblage in the Jingshan chondrite originates from abrasive contamination and that the SRP inclusions (with a low content of Ca, Al, Ti, and Zr) cannot be used as a conclusive indicator for natural SiC. Additionally, the morphologies, biaxiality, and polytypes (determined by Raman spectroscopy) of SiC abrasives bear resemblance to those reported for natural SiC, and caution must be exercised when identifying the origin of SRP in samples processed by conventional methods using SiC abrasives. At the end of this paper, we propose more direct and reliable methods for distinguishing between natural and synthetic SiC.

Phase and Distribution of Inclusions in Multi-crystalline Silicon Ingot for Solar Wafers

Non-metallic Particles in Solar Grade Silicon (Sog-Si)

Numerical Simulation of Directional Solidification Process for the Polycrystalline Silicon Ingot

The characterization of high quality multicrystalline silicon by the electron beam induced current method

Analysis of the formation of interweaved strips in cast quasi-single crystal silicon ingots

Removal of Inclusions from Solar Grade Silicon Using Electromagnetic Field

The dislocation distribution characteristics of a multi-crystalline silicon ingot and its impact on the cell efficiency

Electrical Resistivity Distribution of Silicon Ingot Grown by Cold Crucible Continuous Melting and Directional Solidification

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Investigation of Impurities Distribution on the mc-Si Ingot Grown by the Silicon Nitride Coated Carbon Crucible: Numerical Simulation

(Invited) Defects in Cast-Mono Crystalline Silicon

Phase Field Simulation Research on the Microstructural Evolution of Monocrystalline and Polycrystalline Silicon

Two-peak Characteristic Distribution of Iron Impurities at the Bottom of Cast Quasi-Single-crystalline Silicon Ingot

Role of Longitudinal Temperature Gradients in Eliminating Interleaving Inclusions in Casting of Monocrystalline Silicon Ingots

Phase stability and the interface structure of a nanoscale Si crystallite in Al-based alloys

Distribution and propagation of dislocation defects in quasi-single crystalline silicon ingots cast by the directional solidification method

Continuous Melting and Directional Solidification of Silicon Ingot with an Electromagnetic Cold Crucible

Investigating impurities and surface properties in germanium co-doped multi-crystalline silicon: a combined computational and experimental investigation

Microstructure characterization of SiC nanowires as reinforcements in composites

Clarification of Distinguishing Natural Super-Reduced Phase from Synthetics Based on Inclusions

Microstructure Evolution from Silicon Core to Surface in Electronic-Grade Polycrystalline Silicon