Abstract:Co-condensation of mixed SiGe nanoclusters and impingement of SiGe nanoclusters on a Si substrate were applied using molecular dynamics (MD) simulation in this study to mimic the fast epitaxial growth of SiGe/Si heterostructures under mesoplasma chemical vapor deposition (CVD) conditions. The condensation dynamics and properties of the SiGe nanoclusters during the simulations were investigated first, and then the impingement of transient SiGe nanoclusters on both Si smooth and trench substrate surfaces under varying conditions was studied theoretically. The results show that the mixed nanoclusters as precursors demonstrate potential for enhancing epitaxial SiGe film growth at a high growth rate, owing to their loosely bound atomic structures and high mobility on the substrate surface. By varying cluster sizes and substrate temperatures, this study also reveals that smaller clusters and higher substrate temperatures contribute to faster structural ordering and smoother surface morphologies. Furthermore, the formed layers display a consistent SiGe composition, closely aligning with nominal values, and the cluster-assisted deposition method achieves the epitaxial bridging of heterostructures during cluster impingement, highlighting its additional distinctive characteristics. The implications of this work make it clear that the mechanism of fast alloyed epitaxial film growth by cluster-assisted mesoplasma CVD is critical for extending it as a versatile platform for synthesizing various epitaxial films.

Microstructural Characterization For Ge Clusters Embedded In A-Sin(Y) Matrix Prepared By Pecvd Method

A New Method for Preparing Ge Nano-Crystallites Embedded in Siny Matrices

Sol–gel preparation of Ge nanocrystals embedded in SiO2 glasses

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

A New Approach for Synthesizing Ge Quantum Crystallites Embedded in A Sin(X) Films

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Formation Of Ge Nanocrystals Embedded In A Sio2 Matrix: Transmission Electron Microscopy, X-Ray Absorption, And Optical Studies

Optical properties of Ge/Si quantum dot superlattices

PREPARATION OF nc-Ge EMBEDDED IN SiO2 MATRIX AND OBSERVATION OF VISIBLE PHOTOLUMINESCENCE

Visible Photoluminescent Ge Nanocrystals Embedded In A-Sinx Films

Characterization of a Czochralski Grown Silicon Crystal Doped with 1020 Cm‐3 Germanium

Ge clusters and wetting layers forming from granular films on the Si(001) surface

Cluster-Assisted Mesoplasma Chemical Vapor Deposition for Fast Epitaxial Growth of SiGe/Si Heterostructures: A Molecular Dynamics Simulation Study

Mechanical and Environmental Properties of Ge1−xCx Thin Film

Growth Mechanism and Surface Structure of Ge Nanocrystals Prepared by Thermal Annealing of Cosputtered Gesio Ternary Precursor

Mn-rich clusters in GeMn magnetic semiconductors: Structural evolution and magnetic property

Direct Structural Evidences of Mn11Ge8 and Mn5Ge2 Clusters in Ge0.96Mn0.04 Thin Films

New Crystalline-Structure for Nanometer-Sized Ge Microcrystallites Prepared by Plasma-Enhanced Chemical-Vapor-Deposition

Structural and Photoelectronic Properties of A-Sige:H Thin Films with Varied Ge Prepared by PECVD

Structural and Electrical Properties of Laser-Crystallized Nanocrystalline Ge Films and Nanocrystalline Ge/SiNxmultilayers