Analytical GTO Turn-off Model under Snubberless Turn-off Condition

XN Li,AQ Huang,YX Li
DOI: https://doi.org/10.1016/s0026-2692(02)00170-2
IF: 1.992
2003-01-01
Microelectronics Journal
Abstract:Based on the analysis of numerical simulation results, an analytical turn-off model for the gate turn-off thyristor (GTO) under snubberless condition is developed. The turn-off process predicted by the analytical model is in good agreement with numerical simulation and experimental results.
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