Analysis of the Snubberless Operation of the Emitter Turn-off Thyristor (ETO)

YX Li,AQ Huang,K Motto
DOI: https://doi.org/10.1109/tpel.2002.807087
IF: 5.967
2003-01-01
IEEE Transactions on Power Electronics
Abstract:The emitter turn-off thyristor (ETO) is a GTO-MOSFET hybrid power semiconductor device that turns off the GTO under the unity turn-off gain condition. This paper analyzes the failure mechanism in the snubberless turn-off of the ETO and proposes solutions that extend the snubberless switching capability to the theoretical limitation of the device. Theoretical analysis and experimental results are presented.
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