Control of SiC surfaces by the annealing in a hydrogen gas and the immersion in solutions of HCN
I. Sung-Soon,Liu Yueh-Ling,M. Mohammad,Takahashi Masao,Kobayashi Hikaru
DOI: https://doi.org/10.14886/SSSJ.26.0.157.0
Abstract:Silicon Carbide (SiC) is considered for its possibility of applications to high power devices and high frequency devices, because it has several excellent physical properties, such as high electron mobility, high breakdown field, high thermal conductivity and etc. Unlike silicon (Si), since SiC is chemically stable, 1) the surface of SiC does not smoothen with chemical etching and 2) severe conditions are required for the formation of oxide layers over SiC 3) the standard RCA cleaning process is not always sufficient. We have recently developed the nitric acid oxidation method for the low temperature (i.e., 120°C) formation of SiO2/SiC structure1) and new semiconductor cleaning solutions containing cyanide ions for the complete removal of metal contaminants from Si (or SiO2) surfaces (DPEL cleaning method)2). In the present study the annealing in a hydrogen gas (H2 treatment) has been performed to reduce surface roughness of SiC and the DPEL cleaning method has been utilized to remove metal contaminants from SiC surfaces. 4H (or 3C)-SiC wafers were cleaned using the RCA method and etched with dilute hydrofluoric acid solutions. The H2 treatment was conducted by heating the wafers at 400 °C in pure hydrogen gas for 20 min. In some cases, the SiC wafers were immersed in solutions containing Cu and Ni ions for 10~30 min for the intentional contamination. The intentionally contaminated SiC wafers were immersed in the DPEL cleaning solutions, i.e., HCN aqueous solutions, followed by rinse in ultra-pure water at 25 °C. The AFM was used for observation of the surface morphology. The metal concentration on the SiC surfaces was determined using a total reflection X-ray fluorescence (TXRF) spectrometer at the incident angle of 0.05° with respect to the surface-parallel direction. Figure 1 shows the AFM images of 3C-SiC specimens before and after H2 treatment at 400 °C in a pure hydrogen gas. The surface became smooth after the H2 treatment. The value of Rms decreased by approximately one-half (1.3 nm to 0.5 nm) and keen-edged ruggedness disappeared after the H2 treatment. In the case of 4H-SiC, which is rather smooth at first (Rms of 0.90 nm), the surface became smoother after the H2 treatment (Rms of 0.68 nm). Thus, the simple H2 treatment can control the morphology of SiC surfaces. The removal of metal contaminants from SiC surfaces, which is another issue on SiC materials for electronic applications, has been found to be accomplished by using DPEL cleaning solutions, in which cyanide ions directly react with metal contaminants on SiC surfaces unlike the removal of contaminants on the surface with etching of surface oxide layers in the case of the standard RCA cleaning process. 1) S. Imai, M. Fujimoto, Asuha, M. Takahashi, H. Kobayashi, Surf. Sci., 600 (2006) 547. 2) N. Fujiwara, Y.-L. Liu, T. Nakamura, O. Maida, M. Takahashi, H. Kobayashi, Appl. Surf. Sci., 235 (2004) 372.
Materials Science,Engineering