Abstract:Raman scattering spectra of GaN and Mg-doped GaN films grown by metal-organic chemical-vapor deposition (MOCVD) on sapphire substrate are investigated. Some weak peaks are also observed in two spectra besides the allowed E 2 and A 1(LO) phonon modes in Z(X-)Z backscattering geometry. The origins of these peaks are discussed and the differences between two spectra are compared. Two peaks at 640 and 660 cm -1 are observed both in the spectra of GaN and Mg-doped GaN samples. The 640 cm -1 peak is attributed to an overtone process of the highest acoustic-phonon branch at the zone boundary (L point). The peak at 660 cm -1 is attributed to the optical-phonon branch at the zone boundary or the local vibrational mode induced by defect. In the spectrum of Mg-doped GaN sample there is a broad feature near the two peaks. It is suggested that the broad feature arises from the local vibrational mode of Mg-N bond which superposed on the two peaks mentioned above or arises from defect-induced broaden. Two additional peaks at 276 cm -1 and 376 cm -1 are also observed in the spectrum of Mg-doped GaN sample. The peak at 276 cm -1 is the local vibrational mode of Mg-N bond and the peak at 376 cm -1 is the local vibrational mode of impurity- defect complex. The frequency of E 2 mode in Mg-doped GaN shifted to low energy side compared with GaN sample, and located at 568 cm -1 at room temperature. This indicated that the relaxation of residual stress existed in Mg-doped sample. The stress relaxation is contributed to Mg-induced generation of dislocation. Furthermore, electron-phonon interaction also can induce frequency shift of E 2 mode.

Local Vibrational Modes in Gamma-irradiated GaN Grown by Metal-Organic Chemical Vapor Deposition

Gamma-Ray Irradiation Effects on Fourier Transform Infrared Grazing Incidence Reflection-Absorption Spectra of Gan Films

Using Fourier Transform Infrared Grazing Incidence Reflectivity To Study Local Vibrational Modes In Gan

Two Local Vibrational Modes Related to Hydrogen in GaN

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD

Raman and Infrared Spectra Study of GaN1-xPx Ternary Alloys Grown by MOCVD

Micro-Raman and Photoluminescence Studies of Neutron-Irradiated Gallium Nitride Epilayers

Infrared Reflectance of Gan1-Xpx Ternary Alloys Grown by Metalorganic Chemical Vapor Deposition

New Hydrogen‐Localized Vibrational Modes in Proton‐Implanted GaAs Activated by Γ‐ray Irradiation

Optical property studies of GaN films grown by MOCVD

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Damage Produced on GaN Surface by Highly Charged Krq+ Irradiation

Irradiation Effects on the Structural and Optical Properties of Single Crystal Β-Ga2o3

Correlation Between the Infrared Reflectance and Microstructure of Thin Gallium Nitride Films Grown on Silicon Substrates

Strain Relaxation of GaN Heterostructure Induced by High-Energy Electron Irradiation

Effects of Ion Irradiation and Temperature on Mechanical Properties of GaN Single Crystals under Nanoindentation

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Effects of gamma irradiation on non-polar GaN films deposited on sapphire using pulsed laser deposition

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Optical Characterization of GaN Films by Photoreflectance and Photocurrent Measurement