Abstract:Because of the superlattice structures comprising periodic and alternating crystalline layers, one-dimensional photon crystals can be employed to expand immense versatility and practicality of modulating the electronic and photonic propagation behaviors, as well as optical properties. In this work, individual superlattice microwires (MWs) comprising ZnO and Ga-doped ZnO (ZnO/ZnO:Ga) layers were successfully synthesized. Wavelength-tunable multipeak emissions can be realized from electrically driven single superlattice MW-based emission devices, with the dominant wavelengths tuned from ultraviolet to visible spectral regions. To illustrate the multipeak character, single superlattice MWs were selected to construct fluorescent emitters, and the emission wavelength could be tuned from 518 to 562 nm, which is dominated by Ga incorporation. Especially, by introducing Au quasiparticle film decoration, emission characteristics can further be modulated, such as the red shift of the emission wavelengths, and the multipeaks were strongly modified and split into more and narrower subbands. In particular, electrically pumped exciton-polariton emission was realized from heterojunction diodes composed of single ZnO/ZnO:Ga superlattice MWs and p-GaN layers in the blue-ultraviolet spectral regions. With the aid of localized surface plasmons from Au nanoparticles, which deposited on the superlattice MW, significant improvement of emission characteristics, such as enhancement of output efficiencies, blue shift of the dominant emission wavelengths, and narrowing of the spectral linewidth, can be achieved. The multipeak emission characteristics would be originated from the typical optical cavity modes, but not the Fabry-Perot mode optical cavity formed by the bilateral sides of the wire. The resonant modes are likely attributed to the coupled optical microcavities, which formed along the axial direction of the wire; thus, the emitted photons can be propagated and selected longitudinally. Therefore, the novel ZnO/ZnO:Ga superlattice MWs with a quadrilateral cross section can provide a potential platform to construct multicolor emitters and low-threshold exciton-polariton diodes and lasers.

Realization of One-Chip-two-wavelength Light Sources

Realization of One-Chip-Multiple-Wavelength Laser Diodes with Ii-Vi/Iii-V Compound Semiconductors

Integrated Noncollinear Red–green–blue Laser Light Source Using a Two-Dimensional Nonlinear Photonic Quasicrystal

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

Quantum Well Intermixing For The Realization Of Photonic Integrated Circuits

Photonic integrated circuits fabricated using quantum well intermixing

Optically Pumped Mid-Infrared Light Emitter on Silicon

InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate

Quantum Light Generation based on GaN Microring towards Fully On-chip Source

On-Chip Ultralow-Threshold Tunable CdSSe Nanobelt Lasers Excited by the Emission of Linked ZnO Nanowire

GeSn/Ge Multiquantum-Well Vertical-Cavity Surface-Emitting p-i-n Structures and Diode Emitters on a 200 mm Ge-on-Insulator Platform

Quantum Light Generation Based on GaN Microring Toward Fully On-Chip Source

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Monolithic integration of embedded III-V lasers on SOI

Single layer and stacked CdSe self-assembled quantum dots with ZnCdMgSe barriers for visible and white light emitters

Monolithic Integration of III-nitride Voltage-Controlled Light Emitters with Dual-Wavelength Photodiodes by Selective-Area Epitaxy.

Photoluminescence of Monolayer WSe2 Enhanced by the Exciton Funnel Effect and the Interfacial Carrier Tunneling Effect when Integrated with 3D Si Wrinkled Structures

AC-Driven Multicolor Electroluminescence from a Hybrid WSe2 Monolayer/AlGaInP Quantum Wells Light-Emitting Device

O-Band InAs Quantum Dot Light Sources Monolithically Grown on Si

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Wavelength-Tunable Waveguide Emissions from Electrically Driven Single ZnO/ZnO:Ga Superlattice Microwires