O-Band InAs Quantum Dot Light Sources Monolithically Grown on Si

Shujie Pan,Mengya Liao,Zizhuo Liu,Ying Lu,Victoria Cao,Mingchu Tang,Jae-Seong Park,Jiang Wu,Siming Chen,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1364/cleopr.2018.w1f.2

2018-01-01

Abstract:We discuss our recent progress made in the direct growth of 1.3 μm InAs/GaAs quantum dot (QD)light-emitting sources on Si substrates for Si photonics.

What problem does this paper attempt to address?

InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics

andrew lee,mingchu tang,qi jiang,jiang wu,a j seeds,haizhen liu

DOI: https://doi.org/10.1109/IPCon.2013.6656643

2013-01-01

Abstract:We present the development of InAs/GaAs quantum-dot devices monolithically grown on Si substrates for silicon photonics. Room-temperature cw lasing at 1.3 μm has been demonstrated for the InAs/GaAs quantum-dot devices on Si substrates.
Roadmap of 1300-Nm InAs/GaAs Quantum Dot Laser Grown on Silicon for Silicon Photonics

Zizhuo Liu,Mengya Liao,Constanze Hantschmann,Yi Wang,Taojie Zhou,Mingchu Tang,Jae-Seong Park,Zhaoyu Zhang,Siming Chen,Alwyn Seeds,Richard Penty,Ian White,Siyuan Yu,Huiyun Liu

DOI: https://doi.org/10.1364/oedi.2019.oth1c.1

2019-01-01

Abstract:Quantum dot (QD) lasers monolithically grown on silicon substrates has been considered as a promising approach for on-chip light source in Si photonics. In this paper, the recent progress in Si-based InAs/GaAs QD lasers at 1300nm wavelength is demonstrated.
Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

siming chen,mingchu tang,jiang wu,qi jiang,v g dorogan,mourad benamara,yuriy i mazur,gregory j salamo,huiyun liu

DOI: https://doi.org/10.3390/photonics2020646

IF: 2.536

2015-01-01

Photonics

Abstract:Direct integration of III-V light emitting sources on Si substrates has attracted significant interest for addressing the growing limitations for Si-based electronics and allowing the realization of complex optoelectronics circuits. However, the high density of threading dislocations introduced by large lattice mismatch and incompatible thermal expansion coefficient between III-V materials and Si substrates have fundamentally limited monolithic epitaxy of III-V devices on Si substrates. Here, by using the InAlAs/GaAs strained layer superlattices (SLSs) as dislocation filter layers (DFLs) to reduce the density of threading dislocations. We firstly demonstrate a Si-based 1.3 ae m InAs/GaAs quantum dot (QD) laser that lases up to 111 degrees C, with a low threshold current density of 200 A/cm(2) and high output power over 100 mW at room temperature. We then demonstrate the operation of InAs/GaAs QD superluminescent light emitting diodes (SLDs) monolithically grown on Si substrates. The fabricated two-section SLD exhibits a 3 dB linewidth of 114 nm, centered at similar to 1255 nm with a corresponding output power of 2.6 mW at room temperature. Our work complements hybrid integration using wafer bonding and represents a significant milestone for direct monolithic integration of III-V light emitters on Si substrates.
InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate

siming chen,mingchu tang,qi jiang,jiang wu,v g dorogan,mourad benamara,yuriy i mazur,gregory j salamo,p m smowton,a j seeds,huiyun liu

DOI: https://doi.org/10.1021/ph500162a

IF: 7

2014-01-01

ACS Photonics

Abstract:Building optoelectronic devices on a Si platform has been the engine behind the development of Si photonics. In particular, the integration of optical interconnects onto Si substrates allows the fabrication of complex optoelectronic circuits, potentially enabling chip-to-chip and system-to-system optical communications at greatly reduced cost and size relative to hybrid solutions. Although significant effort has been devoted to Si light generation and modulation technologies, efficient and electrically pumped Si light emitters have yet to be demonstrated. In contrast, III-V semiconductor devices offer high efficiency as optical sources. Monolithic integration of III-V on the Si platform would thus be an effective approach for realizing Si-based light sources. Here, we describe the first superluminescent light-emitting diode (SLD) monolithically grown on Si substrates. The fabricated two-section InAs/GaAs quantum-dot (QD) SLD produces a close-to-Gaussian emission spectrum of 114 nm centered at similar to 1255 nm wavelength, with a maximum output power of 2.6 mW at room temperature. This work complements our previous demonstration of an InAs/GaAs QD laser directly grown on a Si platform and paves the way for future monolithic integration of III-V light sources required for Si photonics.
Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

Mengya Liao,Siming Chen,Suguo Huo,Si Chen,Jiang Wu,Mingchu Tang,Ken Kennedy,Wei Li,Saurabh Kumar,Mickael Martin,Thierry Baron,Chaoyuan Jin,Ian Ross,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1109/jstqe.2017.2693025

IF: 4.9

2017-01-01

IEEE Journal of Selected Topics in Quantum Electronics

Abstract:In this paper, we report monolithically integrated III-V quantum dot (QD) light-emitting sources on silicon substrates for silicon photonics. We describe the first practical InAs/GaAs QD lasers monolithically grown on an offcut silicon (001) substrate due to the realization of high quality III-V epilayers on silicon with low defect density, indicating that the large material dissimilarity between III-Vs and silicon is no longer a fundamental barrier limiting monolithic growth of III-V lasers on Si substrates. Although the use of offcut silicon substrates overcomes the antiphase boundary (APB) problem, it has the disadvantage of not being readily compatible with standard microelectronics fabrication, where wafers with on-axis silicon (001) substrates are used. We therefore report, to the best of our knowledge, the first electrically pumped continuous-wave (c.w.) InAs/GaAs QD lasers fabricated on on-axis GaAs/Si (001) substrates without any intermediate buffer layers. Based on the achievements described above, we move on to report the first study of post-fabrication and prototyping of various Si-based light emitting sources by utilizing the focused ion beam (FIB) technique, with the intention of expediting the progress toward large-scale and low-cost photonic integrated circuits monolithically integrated on a silicon platform. We compare two Si-based QD lasers with as-cleaved and FIB-made facets, and prove that FIB is a powerful tool to fabricate integrated lasers on silicon substrates. Using angled facet structures, which effectively reduce facet reflectivity, we demonstrate Si-based InAs/GaAs QD superluminescent light emitting diodes (SLDs) operating under c.w. conditions at room temperature for the first time. The work described represents significant advances towards the realization of a comprehensive silicon photonics technology.
High-performance InAs/GaAs Quantum-Dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics

Mengya Liao,Mingchu Tang,Siming Chen,Jiang Wu,Huiyun Liu

DOI: https://doi.org/10.1109/cleoe-eqec.2017.8086357

2017-01-01

Abstract:Summary form only given. III-V lasers grown on Si is the most promising solution to light sources on Si platform. The silicon-based telecommunications-wavelength III-V lasers with low threshold current density, high output power, and long lifetime will be presented.
E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Wenqian Liang,Wenqi Wei,Dong Han,Ming Ming,Jieyin Zhang,Zihao Wang,Xinding Zhang,Ting Wang,Jianjun Zhang

DOI: https://doi.org/10.3390/ma17081916

IF: 3.4

2024-04-22

Materials

Abstract:The direct growth of III-V quantum dot (QD) lasers on silicon substrate has been rapidly developing over the past decade and has been recognized as a promising method for achieving on-chip light sources in photonic integrated circuits (PICs). Up to date, O- and C/L-bands InAs QD lasers on Si have been extensively investigated, but as an extended telecommunication wavelength, the E-band QD lasers directly grown on Si substrates are not available yet. Here, we demonstrate the first E-band (1365 nm) InAs QD micro-disk lasers epitaxially grown on Si (001) substrates by using a III-V/IV hybrid dual-chamber molecular beam epitaxy (MBE) system. The micro-disk laser device on Si was characterized with an optical threshold power of 0.424 mW and quality factor (Q) of 1727.2 at 200 K. The results presented here indicate a path to on-chip silicon photonic telecom-transmitters.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

M. Liao,S. Chen,M. Tang,J. Wu,Q. Jiang,A. Seeds,H. Liu

DOI: https://doi.org/10.1117/12.2213089

2016-01-01

Abstract:We report on high quality GaAs-on-Si layers with low threading dislocations obtained by a combination of nucleation layer and dislocation filter layers using the molecular beam epitaxy (MBE) growth method. As a result, we achieved a Si-based electrically pumped 1.3 mu m InAs/GaAs quantum dot (QD) laser that lases up to 111 degrees C with a lasing threshold of 200 A/cm(2), and a single facet output power exceeding 100 mW at room temperature. In addition to Si-based lasers, we also demonstrated the first Si-based InAs/GaAs QD superluminescent light-emitting diode (SLD), from which a close-to-Gaussian emission with a full width at half maximum (FWHM) of similar to 114 nm centered at similar to 1258 nm and maximum output power of 2.6 mW has been achieved.
Silicon-based III-V Quantum Dot Devices for Silicon Photonics

Jiang Wu,Siming Chen,Mingchu Tang,Mengya Liao,Huiyun Liu

DOI: https://doi.org/10.1109/phosst.2016.7548748

2016-01-01

Abstract:Monolithically integrating III-V lasers on Si is the most promising solution to overcome the issue of lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications-wavelength InAs/GaAs quantum dot lasers with low threshold current density, high output power, high operation temperature and long lifetime.
Long Lifetime Quantum-Dot Laser Monolithically Grown on Silicon

Siming Chen,Jiang Wu,Mingchu Tang,Mengya Liao,Huiyun Liu

DOI: https://doi.org/10.1109/group4.2016.7739099

2016-01-01

Abstract:Monolithically integrating III-V lasers on Si is the most promising solution to overcome the lack of efficient light sources on Si platform. We demonstrated the first practical silicon-based telecommunications-wavelength InAs/GaAs quantum dot lasers with low threshold current density, high output power, and long lifetime.
Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

Siming Chen,Mengya Liao,Mingchu Tang,Jiang Wu,Mickael Martin,Thierry Baron,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1364/OE.25.004632

IF: 3.8

2017-01-01

Optics Express

Abstract:We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers. A 400 nm antiphase boundary (APB) free epitaxial GaAs film with a small root-mean-square (RMS) surface roughness of 0.86 nm was first deposited on a 300 mm standard industry-compatible on-axis Si (001) substrate by metal-organic chemical vapor deposition (MOCVD). The QD laser structure was then grown on this APB-free GaAs/Si (001) virtual substrate by molecular beam epitaxy (MBE). Room-temperature cw lasing at similar to 1.3 mu m has been achieved with a threshold current density of 425 A/cm(2) and single facet output power of 43 mW. Under pulsed operation, lasing operation up to 102 degrees C has been realized, with a threshold current density of 250 A/cm(2) and single facet output power exceeding 130 mW at room temperature.
InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform

Keshuang Li,Mingchu Tang,Mengya Liao,Jiang Wu,Siming Chen,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1109/iedm.2018.8614481

2018-01-01

Abstract:III-V quantum dot lasers monolithically integrated on silicon platform attracts intensive interests due to its advantages on providing a promising solution for reliable and efficient light source to integrated on photonics and electronics circuits. Compared to wafer bonding technique, monolithic integration its more attractive for large scale, low cost and streamline fabrication. In this paper, we give a brief review on our recent progress of III-V quantum dot lasers monolithically integrated on 4° offcut and exact (001) Si substrates for the silicon photonic integration.
Tunable Quantum Dot Lasers Grown Directly on Silicon

Yating Wan,Sen Zhang,Justin C. Norman,M. J. Kennedy,William He,Songtao Liu,Chao Xiang,Chen Shang,Jian-Jun He,Arthur C. Gossard,John E. Bowers

DOI: https://doi.org/10.1364/optica.6.001394

IF: 10.4

2019-01-01

Optica

Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.
Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Jiang Wu,Andrew Lee,Qi Jiang,Mingchu Tang,Alwyn J. Seeds,Huiyun Liu

DOI: https://doi.org/10.1049/iet-opt.2013.0093

IF: 1.691

2014-01-01

IET Optoelectronics

Abstract:Continuous-wave (CW) operation of InAs/GaAs quantum dot (QD) lasers monolithically grown on Si substrates by molecular beam epitaxy is presented. The peak lasing wavelength of 1278 nm is accompanied by a low threshold current density of 458 A/cm(2) at 8 degrees C using a GaAs buffer layer directly grown on the Si substrates. The improvement in laser performance is due to improved crystal quality of the GaAs buffer layer. The demonstration of a CW QD laser also benefits from using top-top contacts, which route the current through the laser active layer to avoid the high-density defects near the Si/GaAs interface. These results demonstrate the growing potential of the monolithically integrated III-V QD lasers on the Si substrates.
Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.

Buqing Xu,Guilei Wang,Yong Du,Yuanhao Miao,Ben Li,Xuewei Zhao,Hongxiao Lin,Jiahan Yu,Jiale Su,Yan Dong,Tianchun Ye,Henry H. Radamson

DOI: https://doi.org/10.3390/nano12152704

IF: 5.3

2022-01-01

Nanomaterials

Abstract:The realization of high-performance Si-based III-V quantum-dot (QD) lasers has long attracted extensive interest in optoelectronic circuits. This manuscript presents InAs/GaAs QD lasers integrated on an advanced GaAs virtual substrate. The GaAs layer was originally grown on Ge as another virtual substrate on Si wafer. No patterned substrate or sophisticated superlattice defect-filtering layer was involved. Thanks to the improved quality of the comprehensively modified GaAs crystal with low defect density, the room temperature emission wavelength of this laser was allocated at 1320 nm, with a threshold current density of 24.4 A/cm−2 per layer and a maximum single-facet output power reaching 153 mW at 10 °C. The maximum operation temperature reaches 80 °C. This work provides a feasible and promising proposal for the integration of an efficient O-band laser with a standard Si platform in the near future.
O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Keshuang Li,Zizhuo Liu,Mingchu Tang,Mengya Liao,Dongyoung Kim,Huiwen Deng,Ana M. Sanchez,R. Beanland,Mickael Martin,Thierry Baron,Siming Chen,Jiang Wu,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1016/j.jcrysgro.2019.01.016

IF: 1.8

2019-01-01

Journal of Crystal Growth

Abstract:•III-V laser monolithically integrated on a CMOS-compatible Si substrate.•MBE-grown InAs/GaAs quantum dot laser on Si with low threshold current density (160 A/cm2)•Single facet output power of 48 mW at injection current density of 500 A/cm2 at room temperature.•Laser operation up to 52 °C under continuous-wave operation mode with characteristic temperature of 60.8 K.
Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

Siming Chen,Mengya Liao,Mingchu Tang,Jiang Wu,Mickael Martin,Thierry Baron,Alwyn Seeds,Huiyun Liu

DOI: https://doi.org/10.1364/oe.25.004632

IF: 3.8

2017-01-01

Optics Express

Abstract:We report on the first electrically pumped continuous-wave (cw) InAs/GaAs quantum dot (QD) lasers monolithically grown on on-axis Si (001) substrates without any intermediate buffer layers. A 400 nm antiphase boundary (APB) free epitaxial GaAs film with a small root-mean-square (RMS) surface roughness of 0.86 nm was first deposited on a 300 mm standard industry-compatible on-axis Si (001) substrate by metal-organic chemical vapor deposition (MOCVD). The QD laser structure was then grown on this APB-free GaAs/Si (001) virtual substrate by molecular beam epitaxy (MBE). Room-temperature cw lasing at ~1.3 µm has been achieved with a threshold current density of 425 A/cm2 and single facet output power of 43 mW. Under pulsed operation, lasing operation up to 102 °C has been realized, with a threshold current density of 250 A/cm2 and single facet output power exceeding 130 mW at room temperature.
Quantum Dot Lasers on Silicon by Direct Epitaxial Growth

Alwyn Seeds,Jiang Wu,Siming Chen,Mingchu Tang,Qi Jiang,Huiyun Liu

DOI: https://doi.org/10.1364/fio.2015.fth4b.3

2015-01-01

Abstract:Although many high performance silicon photonic devices have been demonstrated, efficient on-chip light sources remain the ‘holy grail’ for Si photonics due to the indirect bandgap of silicon. III–V semiconductors, which offer excellent optical emission properties have therefore been widely investigated to produce efficient emitters integrated on silicon substrates. The material dissimilarity between silicon and III–V materials poses a major challenge to monolithic integration. Recently, direct III–V/Si integration has received renewed interest, boosted by the recent demonstration of high performance III–V quantum dot lasers by direct epitaxial growth on Si. These quantum dot lasers, monolithically grown on Si substrates, provide an alternative to hybrid integration for integrating photonic circuitry on a Si platform.
Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

Xin Yan,Xia Zhang,Junshuai Li,Jiangong Cui,Qi Wang,Yongqing Huang,Xiaomin Ren

DOI: https://doi.org/10.1016/j.jcrysgro.2013.09.014

IF: 1.8

2013-01-01

Journal of Crystal Growth

Abstract:InAs/GaAs dots-on-nanowire (NW) hybrid heterostructures are grown on Si substrate by metal organic chemical vapor deposition. The formation of InAs quantum dots (QDs) is intimately associated with the NW density as well as the substrate surface properties, both of which strongly affect the surface adatom diffusion. InAs QDs are realized with a short deposition time by reducing the NW density. The QDs exhibit specific facets and pure zinc blende structure, residing on a wetting layer of several nanometers. Photoluminescence emission from the QDs is observed at room temperature, with a linewidth of 186meV. The results are promising for future integration of III–V NW hybrid devices, especially photovoltaic cells on Si.
Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band

Jonathan R. Orchard,Chris Woodhead,Jiang Wu,Mingchu Tang,Richard Beanland,Yasir Noori,Huiyun Liu,Robert J. Young,David J. Mowbray

DOI: https://doi.org/10.1021/acsphotonics.7b00276

IF: 7

2017-01-01

ACS Photonics

Abstract:We report the observation of single quantum dot (QD) emission in the telecoms C-band (1530–1565 nm) from an InAs QD structure grown on a Si substrate. A large red-shift of the emission is achieved by capping InAs QDs with a thin GaAsSb layer. Sharp lines, representing emission from single QDs, are observed out to wavelengths as long as 1540 nm. Comparison is made to the optical properties of a nominally identical active region structure grown on a GaAs substrate. Single QD emission from a Si-based system at 1500 nm has the potential for single photon sources compatible with current optical fibers and reduced complexity of integration with drive electronics.

O-Band InAs Quantum Dot Light Sources Monolithically Grown on Si

InAs/GaAs quantum-dot lasers and detectors on silicon substrates for silicon photonics

Roadmap of 1300-Nm InAs/GaAs Quantum Dot Laser Grown on Silicon for Silicon Photonics

Long-Wavelength Inas/Gaas Quantum-Dot Light Emitting Sources Monolithically Grown On Si Substrate

InAs/GaAs quantum-dot superluminescent light-emitting diode monolithically grown on a Si substrate

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

High-performance InAs/GaAs Quantum-Dot Laser Didoes Monolithically Grown on Silicon for Silicon Photonics

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Inas/Gaas Quantum-Dot Light Emitters Monolithically Grown On Si Substrates

Silicon-based III-V Quantum Dot Devices for Silicon Photonics

Long Lifetime Quantum-Dot Laser Monolithically Grown on Silicon

Electrically pumped continuous-wave 1.3 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates.

InAs/GaAs Quantum Dot Lasers Monolithically Integrated on Group IV Platform

Tunable Quantum Dot Lasers Grown Directly on Silicon

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

Monolithic Integration of O-Band InAs Quantum Dot Lasers with Engineered GaAs Virtual Substrate Based on Silicon.

O-band InAs/GaAs quantum dot laser monolithically integrated on exact (0 0 1) Si substrate

Electrically pumped continuous-wave 13 µm InAs/GaAs quantum dot lasers monolithically grown on on-axis Si (001) substrates

Quantum Dot Lasers on Silicon by Direct Epitaxial Growth

Growth of InAs quantum dots on Si-based GaAs nanowires by controlling the surface adatom diffusion

Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band