Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Silicon-Based Single Quantum Dot Emission in the Telecoms C-Band

Single photon emission in the telecom C-band from nanowire-based quantum dots

Tunable Quantum Dot Lasers Grown Directly on Silicon

Purcell-Enhanced Single Photons at Telecom Wavelengths from a Quantum Dot in a Photonic Crystal Cavity

Bright single InAs quantum dots at telecom wavelengths in site-selective InP nanowires

MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Bright Source of Purcell‐Enhanced, Triggered, Single Photons in the Telecom C‐Band

Purcell-Enhanced Single-Photon Emission in the Telecom C-Band

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

Telecom wavelength single-photon source based on InGaSb/AlGaSb quantum dot technology

On-demand single photon emission in the telecom C-band from nanowire-based quantum dots

Single InAs Quantum Dot Grown at the Junction of Branched Gold-Free GaAs Nanowire.

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy

Quantum efficiency and oscillator strength of InGaAs quantum dots for single-photon sources emitting in the telecommunication O-band

On-Demand Generation of Indistinguishable Photons in the Telecom C-Band using Quantum Dot Devices

Zincblende InAsxP1- x/InP Quantum Dot Nanowires for Telecom Wavelength Emission