Abstract:Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced applications. Additionally, SiC has large bandgap and excellent material properties, also making itself a suitable material for UV photodetection. More importantly, high-quality AlGaN alloys can be epitaxially grown on SiC substrates because of the very small lattice mismatch between them (less than 1%), which enables a possible monolithic integration of those two materials and allows us to take advantage of their material and physical properties to realize high-performance UV optoelectronics and eventually the integrated UV photonics systems. Herein, we review the recent progress in the development of UV optoelectronics based on AlGaN-SiC platform, mainly focusing on: (1) the growth strategies and material characterizations of AlGaN epilayers on SiC; (2) the fabrication and performance evaluation of UV optoelectronic devices built on the platform, including UV LEDs/lasers and UV photodetectors. Thereafter, we briefly discuss the initial efforts in the pursuit of monolithic integration of those UV optoelectronic devices. Finally, the challenges and potential advances associated with individual UV optoelectronic components as well as UV integrated photonics system on the prosperous AlGaN-SiC platform are outlined, providing insights and perspectives for possible deviceand system-level innovation in future.

Monolithic Integration of III-nitride Voltage-Controlled Light Emitters with Dual-Wavelength Photodiodes by Selective-Area Epitaxy.

Monolithic Integration of Nitride Light Emitting Diodes and Photodetectors for Bi-Directional Optical Communication.

Monolithically Integrated GaN-based HEMT-LED and InGaN/GaN Photodiodes for On-Chip Optical Interconnects

Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform

Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth

GaN-Based Micro-Light-Emitting Diode Driven by a Monolithic Integrated Ultraviolet Phototransistor

Hybrid Light Emitters and UV Solar-Blind Avalanche Photodiodes Based on III-Nitride Semiconductors.

On-Chip Integration of III-Nitride Flip-Chip Light-Emitting Diodes with Photodetectors

Monolithic Photonic Integration of Suspended Light Emitting Diode, Waveguide and Photodetector

Monolithic Integration of Deep Ultraviolet LED with a Multiplicative Photoelectric Converter

Ultraviolet Optoelectronic Devices Based on AlGaN-SiC Platform: Towards Monolithic Photonics Integration System

Optoelectronic Devices on AlGaN/GaN HEMT Platform (phys. Status Solidi A 5∕2016)

Van der Waals contacted MoO x staked ZnO/GaN vertical heterostructured ultraviolet light emitting diodes.

HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth

Iii-Nitride Deep Ultraviolet Micro- and Nano-Photonics

Design and Photomodulation Performance of a UV-Driven Full GaN Integrated μLED and BJT Phototransistor

UV Photonic Integrated Chip Based on Epitaxial III-N on Si for Short-Range On-Chip Data Transmission

Heterogeneously integrated III-V-on-lithium niobate broadband light sources and photodetectors.

Membrane-type Photonic Integration of InGaN/GaN Multiple-Quantum-well Diodes and Waveguide

Dual-channel on-chip data transmission system using UV light based on GaN-on-Si wafer

Monolithic Dual-Wavelength AlGaN-Based UV-LEDs with Controllable Spectral Profile