Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

ZnO Nanowires Grown along the Non-Polar Direction

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Inclined and ordered ZnO nanowire arrays developed on non-polar ZnO seed-layer films

Growth And Characterization Of Cu-Catalyzed Zno Nanowires

Arrays of ZnO Nanowires Fabricated by a Simple Chemical Solution Route

Growth of Zinc Blende Gaas/Algaas Radial Heterostructure Nanowires by A Two-Temperature Process

Growth and Electrical Properties of Zinc Oxide Nanowires.

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition

Synthesis and Characterization of ZnO Nanowires Using a Simple PVD Approach Without Catalysts

Synthesis and Characterization of Cubic MgZnO Nanowires

Growth of ultrafine ZnS nanowires

Facile and Controllable Growth of ZnO 1D Nanostructure Arrays on Zn Substrate by Hydrothermal Process

Low-Temperature Growth and Properties of Zno Nanowires

Straight and Thin ZnO Nanorods: Hectogram-Scale Synthesis at Low Temperature and Cathodoluminescence.

Synthesis of Zno/Cubic (zn, Mg)O Heterostructure Nanorods

Synthesis, Microstructure, and Growth Mechanism of Dendrite ZnO Nanowires

Epitaxial growth of aligned MgO nanowire arrays on a single crystalline substrate

Catalyst-free Synthesis of Well-Aligned ZnO Nanowires on In0.2Ga0.8N, GaN, and Al0.25Ga0.75N Substrates.

Growth of single crystal zinc oxide beaded nanowires.

Synthesis of Well-aligned ZnO Nanowires Using Simple Physical Vapor Deposition Without Catalysts or Additives

Chemical Vapor Deposition-Based Growth of Aligned ZnO Nanowires on Polycrystalline Zn2GeO4:Mn Substrates