Abstract:This chapter explores how static random-access memory (SRAM) functionality is influenced by application of a Body-Bias voltage. Investigating the SRAM stability is a complex task itself, even without any applied Body-Bias. After a short introduction to yield and why nowadays SRAM stability is the major detractor of silicon yield, the bitcell circuit is presented and its major failure modes are discussed. After further inquiries about how technology specifications about SRAM can be embedded into spice model cards, it is shown how to use the latter to build a yield model under the Vmin paradigm, by which a single voltage value is taken as minimum supported operating voltage at each different process and temperature condition, and how the model fits to silicon data. Body-Bias effects on the bitcell are then discussed and the high frequency (HF) functionality is explored with both experimental and theoretical results, leading to a very complex framework that calls for a new paradigm based on the maximum number of instantiation Nmax, in order to have an efficient data analysis. This is carried out with the yieldogram tool, that ultimately allows to present Body-Bias effects on the expected, mass-scale production yield of arbitrary amounts of memory, even at HF. This chapter text includes and extends the content of some of the author’s publications (Thomas et al., 2014 IEEE international electron devices meeting, pp 3.4.1–3.4.4, 2014. https://doi.org/10.1109/IEDM.2014.7046973; Ranica et al., 2016 IEEE symposium on VLSI circuits (VLSI-circuits), pp 1–2, 2016. 10.1109/VLSIC.2016.7573512; Ciampolini et al., 2016 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), pp. 1–8, 2016. https://doi.org/10.1145/2966986.2967031; Akyel, Statistical methodologies for modeling the impact of process variability in ultra-deep-submicron SRAMs, PhD manuscript, Université de Grenoble, 2014; Dhori et al., 2017 IEEE international symposium on defect and fault tolerance in VLSI and nanotechnology systems (DFT), pp 1–6, 2017. 10.1109/DFT.2017.8244429; Ciampolini et al., J Low Power Electron 8(1):106, 2012. 10.1166/jolpe.2012.1175).

SRAM stability analysis considering gate oxide SBD, NBTI and HCI

Process Variation and Temperature-Aware Full Chip Oxide Breakdown Reliability Analysis.

Off-state Avalanche-Breakdown-induced On-Resistance Degradation in SGO–NLDMOS

A VDD Correction Method for Static Stability Test of SRAM Bit Cell

Sram Circuit-Failure Modeling and Reliability Simulation with Spice

Comprehensive Study of NBTI and Off-State Reliabilty in Sub-20 Nm DRAM Technology: Trap Identification, Compact Aging Model, and Impact on Retention Degradation

Variability-Aware Noise-Induced Dynamic Instability of Ultra-Low-Voltage SRAM Bitcells

On the Understanding and Modeling of Non-Negligible Subthreshold-State Degradation (SSD) in Sub-20-nm DRAM Technology

Accurate Estimation of SRAM Dynamic Stability

Modeling of Charge-to-Breakdown with an Electron Trapping Model for Analysis of Thermal Gate Oxide Failure Mechanism in SiC Power MOSFETs

Simulation of Transient Radiation Upset in a 0.18-Μm CMOS SRAM by Accurately Modeling a 6T Memory Cell

SRAM dynamic stability verification by reachability analysis with consideration of threshold voltage variation.

Compact Modeling of MOSFET Wearout Mechanisms for Circuit-Reliability Simulation

Large-Scale SRAM Variability Characterization in 45 nm CMOS

Development of a Technique for Characterizing Bias Temperature Instability-Induced Device-to-Device Variation at SRAM-Relevant Conditions

Interaction of Negative Bias Instability and Self-Heating Effect on Threshold Voltage and SRAM (Static Random-Access Memory) Stability of Nanosheet Field-Effect Transistors

A study of scaling effects on DRAM reliability

SRAM Bitcell Functionality Under Body-Bias

Roles of the Gate Length and Width of the Transistors in Increasing the Single Event Upset Resistance of SRAM Cells

Novel 15T SRAM Cell for Low Voltage High Reliability Application

Degradation Dependency Analysis and Modeling of 1700 V Planar-Gate SiC MOSFETs under Gate Switching Instability