The resonant field electron emission from DLC film>>>atlfn>This work is supported by the National Natural Science Foundation of China.

De-Chang Li,Guang-Jun Liu,Yin-Tang Yang,Chang-Chun Zhu
DOI: https://doi.org/10.1016/S0304-3991(99)00091-1
IF: 2.994
1999-01-01
Ultramicroscopy
Abstract:A wide-gap thin film cathode of nanometer scale is drafted out. When an anode voltage is applied, a double-triangle barrier will be formed inside the thin film on the substrate, so that the electron emission process is similar to the tunneling in a double-barrier diode. In this paper, the electron-tunneling coefficient is calculated with a matrix approach, the emission current being integrated with the Simpson quadrature method. It is found that both the tunneling coefficient and the emission current are of resonant property. The resonant apex is sharp and the peak-to-peak value reaches six orders of magnitude (10(6)). The resonant points that benefit the electron emission are not few. In practical situation, the applied fields may be greatly intensified by the agglomerations of the local impurities, defects and the interface states at the FEE surface; so the thickness may be well beyond the nanometer scale and the applied field intensity may be greatly reduced. (C) 1999 Elsevier Science B.V. All rights reserved.
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