Abstract:Two-dimensional (2D) materials have emerged as promising platforms for quantum technologies and optoelectronics, with defects playing a crucial role in their properties. We present a comprehensive density functional theory study of silicon and carbon vacancies in monolayer silicon carbide (1L-SiC), a wide-bandgap 2D semiconductor with potential for room-temperature quantum applications. Using PBE, SCAN, r$^2$SCAN, and HSE06 functionals, we reveal distinct characteristics between Si and C vacancies. Formation energies and charge transition levels show strong functional dependence, with HSE06 consistently predicting higher values and deeper transition levels compared to PBE calculations. Electronic structure analysis demonstrates contrasting behavior: silicon vacancies create highly localized states with strong spin polarization, while carbon vacancies produce more dispersed states with weaker magnetic properties. Vacancy migration studies reveal significantly lower barriers for silicon vacancies compared to carbon vacancies, indicating higher mobility for Si vacancies at moderate temperatures. Optical properties, calculated using PBE-DFPT, show distinct charge-state dependent absorption in the far-infrared region, with positively charged states of both vacancy types demonstrating the strongest response. The complementary characteristics of Si and C vacancies - localized versus dispersed states, different magnetic properties, and distinct optical responses - suggest possibilities for defect engineering in quantum and optoelectronic applications. Our results highlight the critical importance of advanced functionals in accurately describing defect properties and provide a comprehensive framework for understanding vacancy behavior in 2D materials.

Adatom Vacancies on the Si(111)-(7×7) Surface

Observation of Local Electronic Structures of Adatom Vacancies Insi(111)−(7×7)surface in Real Space

Observation Of Local Electronic Structures Of Adatom Vacancies In Si(111)-(7x7) Surface In Real Space

Electronic Structures of an Extra Si Atom Diffusing in the Si(1 1 1)(7 × 7) Surface

Molecular Dynamics Simulation on Vacancy-interstitial Annihilation in Silicon

Dimer-vacancy–dimer-vacancy Interaction on the Si(001) Surface: the Nature of the 2×Nstructure

Missing dimer vacancies ordering on the Si(100) surface

First principles study of vacancies in Si

Ab Initio Calculation of Vacancies and Interstitials in NiSi 2

Electronic-Structures Of Ag-Adsorbed Si(111) Surface

Existence probabilities of single Si atoms diffusing in Si(111)-(7 × 7) half-unit cells at room temperature

First-principles Study of Adsorption and Diffusion on Ge/Si(001)-(2×8) and Ge/Si(105)-(1×2) Surfaces

Atomistic Simulation of the Vacancy in Ni (1 1 0) Surface

Atomic Simulation of the Point Defects in Three Low‐index Surfaces of BCC Transition Metals with the MAEAM

Dimer-Flipping-Assisted Diffusion on A Si(001) Surface

Investigation of Vacancy in C54 TiSi2 Using Ab Initio Method

Strain-induced structure transformations on Si(111) and Ge(111) surfaces: a combined density-functional and scannning tunnneling microscopy report

Atomistic Simulation of the Vacancy in W(001) Surface

Atomic Structure Of The Si(112) 7x1-In Surface

Vacancy-Induced Quantum Properties in 2D Silicon Carbide: Atomistic insights from semi-local and hybrid DFT calculations

Interaction Between Adatom-Induced Localized States and A Quasi-Two-Dimensional Electron Gas