Study of the GaN Film by Spectroscopic Ellipsometry

Yu Yangjing,Li Kongyi,Jiang Wei,Li Shuping,Kang Junyong
DOI: https://doi.org/10.3969/j.issn.1003-353x.2011.11.002
2011-01-01
Abstract:Optical property of wurtzite GaN film was investigated by spectroscopic ellipsometry(SE) in the spectrum range of 1.50~6.50 eV.Unintentionally doped wurtzite GaN film was fabricated by metal-organic chemical vapor deposition(MOCVD) on(0001) sapphire.Four-layer physical structure model including surface layer,epilayer,buffer layer and substrate was built by analysis.Compared with common dispersion formulas such as Cauchy and Sellmeier,Tanguy Extended dispersion formulas was used to characterize optical property of wurtzite GaN film.According to the fitting result of SE,Tanguy Extend dispersion formulas can well characterize dispersion relation of refractive and extinction index with full waveband,especially around and above bandgap.The dispersion relation of refractive and extinction index of ordinary(o) and extraordinary(e) was offered,which is the base of quantitative analysis of anisotropic optical property of GaN film.
What problem does this paper attempt to address?