Electrical Properties of Cu-TCNQ Prepared by the Limited Growth

Ning Gu,Hao-Ying Shen,Lan Zhang,Hai-Qian Zhang,Zu-Hong Lu,Yu Wei
DOI: https://doi.org/10.1080/10587259708032281
2006-01-01
Abstract:A new method, limited growth of organometallic films in liquid phase, for preparation of Cu-TCNQ crystallites was adopted herein. Then the electrical properties of the Al/Cu-TCNQ film/Cu sandwichlike structures could be measured. The The transition between the highly resistive and conductive states with different parameters, such as threshold voltage, the shape of I-V curve, can be found depending on different average sizes of Cu-TCNQ grains. The the crystal boundaries may be one of the important factors contributing to the switching mechanism of Cu-TCNQ films has been suggested.
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