Research On The Structure Of Ag-Tcnq Thin Films For Information Storage

xinggong wan,dianyong chen,yiming jiang,hua zhang,jin li,zhongyi hua
DOI: https://doi.org/10.1117/12.408476
2000-01-01
Abstract:The structure and the electrical bistable properties of vacuum deposited thin films of Ag-TCNQ (7,7,8,8,-Tetracyanoquinodimethane) complex have been investigated. The characteristics of obtained films under different preparation conditions have been compared. The optical transmission spectra and the X-ray diffraction (XRD) measurements were conducted to analyze the structure and the thermal stability of the films. The atomic force microscope (AFM) was used to examine the morphology and grain size of the films. The corresponding electrical switching property was measured upon the Ag-TCNQ films with different combined sandwich-shaped electrodes. The results show that the films can have very stable switching properties. The switching time between high and low impedance states is about 10 ns, and the switching voltage is around 4.0 V. The film preparation parameters and different layered structures have an important influence on the characteristic of the films. The switching mechanism was discussed.
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