The Improved Performance of Phosphorescent P-I-n Organic Light Emitting Diodes Via Enhancing Hole Injection and Reducing Triplet-Polaron Annihilation
Shuting Jin,Zeqi Yu,Zhihua Shi,Chunxin Chen,Jidong Zhang,Qingqing Yang,Dashan Qin
DOI: https://doi.org/10.1088/2053-1591/ab237a
IF: 2.025
2019-01-01
Materials Research Express
Abstract:Red phosphorescent p-i-n organic light emitting diodes (OLEDs) have been fabricated incorporating bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate doped host of N,N′-bis-(1-naphthyl)-diphenyl-1,1′-biphenyl-4,4′-diamine [NPB:Ir(piq)2(acac)] and cohost of NPB and 4,4′-N,N′-dicarbazole-biphenyl [NPB:CBP:Ir(piq)2(acac)]. The current efficiency based on NPB:CBP:Ir(piq)2(acac) (x:100-x:25 by mass) is increased than that based on NPB:Ir(piq)2(acac) (100:25), where x = 40, 50, 60, and 70, mostly because the CBP contributes to electron transport, decreasing the number of electrons conducted by Ir(piq)2(acac) and thereby relieving triplet-polaron annihilation. Compared to MoO3 p-doped NPB (NPB:MoO3), the combined MoO3 p-doped CBP (CBP:MoO3) and NPB:MoO3 enhances hole current into emissive layer, mainly due to the fact that the hole injection from indium tin oxide (ITO) to CBP:MoO3 is more efficient than that from ITO to NPB:MoO3. The device applying NPB:CBP:Ir(piq)2(acac) (60:40:25) and CBP:MoO3/NPB:MoO3 shows comparable current density versus voltage curve while increased current efficiency than the one employing NPB:CBP:Ir(piq)2(acac) (50:50:25) and NPB:MoO3. The current research provides some insight to optimize the architectures of phosphorescent p-i-n OLEDs.