Investigation on Interface Barrier of Au–CdZnTe Contacts

Qiang Li,Wanqi Jie,Li Fu,Gangqiang Zha

DOI: https://doi.org/10.1016/j.nima.2006.03.026

2006-01-01

Abstract:The interface barrier between Au contact and p-CdZnTe was studied by synchrotron-based X-ray photoemission spectroscopy (SXPS), where the interface barrier was determined by the discrepancy between EV−C deduced by the Cd 4d core level with valence band region and EB deduced by the Cd 4d core level with the Fermi edge. The interface barrier height was determined to be 0.88±0.02eV for Au–CdZnTe without passivation and 1.17±0.02eV for Au–CdZnTe after passivation. Schottky barrier height was 0.85±0.02eV without passivation and 0.96±0.02eV with passivation by current–voltage method. However, 1.39±0.02eV without passivation and 1.51±0.02eV with passivation were measured according to the capacitance–voltage method.