Abstract:Ultrawide bandgap (UWBG) semiconductor materials, with bandgaps far wider than the 3.4 eV of GaN, have attracted great attention recently. As a typical representative, wurtzite aluminum nitride (AlN) material has many advantages including high electron mobility, high breakdown voltage, high piezoelectric coefficient, high thermal conductivity, high hardness, high corrosion resistance, high chemical and thermal stability, high bulk acoustic wave velocity, prominent second-order optical nonlinearity, as well as excellent UV transparency. Therefore, it has wide application prospects in next-generation power electronic devices, energy-harvesting devices, acoustic devices, optical frequency comb, light-emitting diodes, photodetectors, and laser diodes. Due to the lack of low-cost, large-size, and high-ultraviolet-transparency native AlN substrate, however, heteroepitaxial AlN film grown on sapphire substrate is usually adopted to fabricate various devices. To realize high-performance AlN-based devices, we must first know how to obtain high-crystalline-quality and controllable AlN/sapphire templates. This review systematically summarizes the recent advances in fabricating wurtzite AlN film on (0001)-plane sapphire substrate. First, we discuss the control principles of AlN polarity, which greatly affects the surface morphology and crystalline quality of AlN, as well as the electronic and optoelectronic properties of AlN-based devices. Then, we introduce how to control threading dislocations and strain. The physical thoughts of some inspirational growth techniques are discussed in detail, and the threading dislocation density (TDD) values of AlN/sapphire grown by various growth techniques are compiled. We also introduce how to achieve high thermal conductivities in AlN films, which are comparable with those in bulk AlN. Finally, we summarize the future challenge of AlN films acting as templates and semiconductors. Due to the fast development of growth techniques and equipment, as well as the superior material properties, AlN will have wider industrial applications in the future.

Optical Anisotropy of Aln Epilayer on Sapphire Substrate Investigated by Variable-Angle Spectroscopic Ellipsometry

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Heteroepitaxy of N-polar AlN on C-face 4H-SiC: Structural and optical properties

Optical and Structural Investigation of AlN Grown on Sapphire with Reactive MBE Using RF Nitrogen or Ammonia

Characterization of Optical Properties and Thermo-Optic Effect for Non-Polar AlGaN Thin Films Using Spectroscopic Ellipsometry

Recent Advances in Fabricating Wurtzite AlN Film on (0001)-Plane Sapphire Substrate

Polarized Photoluminescence and Absorption in A-Plane Inn Films

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Temperature Dependence of Stress and Optical Properties in AlN Films Grown by MOCVD

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

High-quality AlN Epitaxy on Nano-Patterned Sapphire Substrates Prepared by Nano-Imprint Lithography

Crystalline Anisotropy of Β-Ga2o3 Thin Films on a C-Plane GaN Template and a Sapphire Substrate

Molecular Beam Epitaxy and Characterization of Wurtzite ScxAl1−xN

Optical Properties of Highly Ordered Aln Nanowire Arrays Grown on Sapphire Substrate

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS2

Atomic Plane Misorientation Assisted Crystalline Quality Improvement in Epitaxial Growth of AlN on a Nanopatterned Sapphire (0001) Surface for Deep Ultraviolet Photoelectric Devices

Characterization of Tetragonal Distortion in A Thick Al0.2ga0.8n Epilayer with an Aln Interlayer by Rutherford Backscattering/Channeling

The In-Plane-Two-Folders Symmetric a-Plane AlN Epitaxy on r-Plane Sapphire Substrate

The In-Plane-Two-Folders Symmetric <i>a</i>-Plane AlN Epitaxy on <i>r</i>-Plane Sapphire Substrate

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS₂.