Effects of SiO2 Slurry on AIN Polishing Properties

Qing Yin,Guoling Zhang,Huiming Tang,Tao Sun
DOI: https://doi.org/10.3969/j.issn.1671-4776.2010.06.011
2010-01-01
Abstract:During the CMP process for AlN substrates,the influence of slurry parameters,such as the pH,abrasive particle diameter and abrasive particle mass fraction,on the polishing effect was studied.Through polishing experiments,it is found that the large-size and high mass fraction of abrasive particle is conductive to improve the polishing rate while the pH is 10.5-11.5.According to the test results,the appropriate slurry parameters were selected,and the slurry A consisting of the nano SiO2 sol,de-ionized water,pH regulator and stabilizer was prepared to carry out AlN substrate polishing.Using the self-prepared slurry A,the AlN substrate was polished for 1.5 h with the quality proportion of A to water by 1∶5,pressure 1.8 MPa,speed 60 r/min and flow rate 340 mL/min.The results show that the surface roughness of the AlN substrate is 28 nm without any scratches on the surface.
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