Abstract:Photocatalysis-assisted chemical mechanical polishing, in which the photocatalysis oxidation and silica abrasives polishing are combined, is a novel finishing technique for 4H–SiC wafer. This paper characterizes the effect of pressure and abrasives on the MRR and surface quality and discusses mechanical and chemical interaction based three slurries that resulted in maximum material removal rate (1.18 μm/h) with PCMP slurry. The polished silicon carbide wafer was examined with atomic force microscope, transmission electron microscope and X-ray photoelectron spectroscopy for surface quality and material removal mechanism. The results show that an atomically smooth and flat 4H–SiC (0001) surface (Ra about 0.247 nm) was obtained by PCMP. The interface of crystal and amorphous layer of 4H–SiC wafer was flat without introducing crystallographic subsurface damage, and the atoms and lattice fringes of the crystal layer are arranged in regular order. The existence of a thin silicon oxycarbide layer, which are various forms of functional groups such as Si–C, Si–C–O, Si–O, Si4C4O4, C–O, and C = O, at the interface. And, it also demonstrates that the amorphous layer is composed of oxide layer (4–6 nm) and distorted layer. The silicon carbide surface is mechanically activated, oxidized and mechanically removed in turn, which is the main method of material removal.

CHEMICAL MECHANICAL POLISHING REMOVAL RATE AND MECHANISM OF SEMICONDUCTOR SILICON WITH NANO-SiO2 SLURRIES

XPS, UV–vis Spectroscopy and AFM Studies on Removal Mechanisms of Si-face SiC Wafer Chemical Mechanical Polishing (CMP)

Effects of Process Parameters on Electrochemical Characteristics of Silicon Wafers During Chemical Mechanical Polishing

Two-Step Chemical Mechanical Polishing of 4H-SiC (0001) Wafer

Atomic Surface of Silicon Wafers Induced by Grafted Silica Nanoparticles and Sodium Carbonate

High Efficiency Chemical Mechanical Polishing for Silicon Wafers Using a Developed Slurry

Investigation on Material Removal Mechanisms in Photocatalysis-Assisted Chemical Mechanical Polishing of 4H–SiC Wafers

Chemical Mechanical Polishing (CMP) of On-Axis Si-face 6H-Sic Wafer for Obtaining Atomically Flat Defect-Free Surface

Effect and Mechanism of Dual-Official Group of Ethanolamines on the Chemical Mechanical Polishing of Monocrystalline Silicon

Chemical effect on the material removal rate in the CMP of silicon wafers

Material Removal Rate of 6H-Sic Crystal Substrate CMP Using an Alumina（al 2 O 3 ） Abrasive

CHEMICAL MECHANICAL MATERIAL REMOVAL OF SILICON DIOXIDE BY A SINGLE PAD ASPERITY

Chemical Mechanical Planarization (cmp) of On-Axis Si-Face Sic Wafer Using Catalyst Nanoparticles in Slurry

Polishing Mechanism of CMP 4H-SiC Crystal Substrate (0001) Si Surface Based on an Alumina (Al2O3) Abrasive

Atomistic Mechanisms of Si Chemical Mechanical Polishing in Aqueous H2O2: ReaxFF Reactive Molecular Dynamics Simulations

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

Influences of Nonaqueous Slurry Components on Polishing 4H-Sic Substrate with a Fixed Abrasive Pad

Chemical Mechanical Polishing for Monocrystal SiC Assisted by the Heterogeneous Sono-Fenton Oxidation

Effects of SiO2 Slurry on AIN Polishing Properties

Improved Chemical Mechanical Polishing Performance in 4H-Sic Substrate by Combining Novel Mixed Abrasive Slurry and Photocatalytic Effect

Effects of Polishing Pressure on Electrochemical Characteristics of Silicon Wafers During Cmp