Processing parameters optimization of Cl2/H2 ICP etching and its used for the fabrication of 1.55 μm DFB laser

Shan Jiang,Lei Dong,Ruikang Zhang,Yong Luo,Shizhong Xie
2009-01-01
Abstract:Using specially designed InGaAsP/InP multiple quantum well(MQW) structure,the damage effects of Cl2/H2 inductive coupled plasma(ICP) etching were investigated systematically,and the key processing parameters for low damage ICP etching have been optimized.An effective method for the fabrication of Bragg grating with low damage and high quality surface has been obtained.Combined with well optimized metal organic chemical vapour deposition(MOCVD) growth technique,a 1.55 μm DFB laser has been fabricated.Before endface optical coating,its threshold current,slope efficiency and side mode suppression ratio are 15 mA,0.3 mW/mA and 45 dB,respectively.The result of accelerated aging test shows that its median life at 40 ℃ is more that 2×106 h,which verifies the reliability of our ICP etching processing in Bragg grating fabrication.
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