Optical switching based on transparency in a semiconductor double-quantum well

xuemei su,jinyue gao

DOI: https://doi.org/10.1016/S0375-9601(99)00831-2

IF: 2.707

2000-01-01

Physics Letters A

Abstract:We propose a scheme for a photon switch in a semiconductor double-quantum well structure by quantum interference in intersubband transitions. (C) 2000 Published by Elsevier Science B.V. All rights reserved.

What problem does this paper attempt to address?

Quantum-confined Stark Effect and Its Application in Optical Switches

徐枝新,王明华,江晓清,周强,杨爱龄

DOI: https://doi.org/10.3969/j.issn.1671-8798.2004.04.004

2004-01-01

Abstract:This paper introduces the principal content of quantum-confined Stark effect(QCSE),gives fast 2×2 Mach-Zehnder optical space switches based QCSE.By analysing the performance of the switches, it also points out the shortcoming of optical switches by using rectangular quantum well structures, and finally provides a solution with FACQW'S.
Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

Jian Qi Shen,Jing Gu

DOI: https://doi.org/10.7566/jpsj.87.044401

2018-01-01

Journal of the Physical Society of Japan

Abstract:Atomic phase coherence (quantum interference) in a multilevel atomic gas exhibits a number of interesting phenomena. Such an atomic quantum coherence effect can be generalized to a quantum-dot molecular dielectric. Two quantum dots form a quantum-dot molecule, which can be described by a three-level.-configuration model {vertical bar 0 >, vertical bar 1 >, vertical bar 2 >}, i.e., the ground state of the molecule is the lower level vertical bar 0 > and the highly degenerate electronic states in the two quantum dots are the two upper levels vertical bar 1 >, vertical bar 2 >. The electromagnetic characteristics due to the vertical bar 0 >-vertical bar 1 > transition can be controllably manipulated by a tunable gate voltage (control field) that drives the vertical bar 2 >-vertical bar 1 > transition. When the gate voltage is switched on, the quantum-dot molecular state can evolve from one steady state (i.e., vertical bar 0 >-vertical bar 1 > two-level dressed state) to another steady state (i.e., three-level coherent-population-trapping state). In this process, the electromagnetic characteristics of a quantum-dot molecular dielectric, which is modified by the gate voltage, will also evolve. In this study, the transient evolutional behavior of the susceptibility of a quantum-dot molecular thin film and its reflection spectrum are treated by using the density matrix formulation of the multilevel systems. The present field-tunable and frequency-sensitive electromagnetic characteristics of a quantum-dot molecular thin film, which are sensitive to the applied gate voltage, can be utilized to design optical switching devices.
Ultrahigh speed semiconductor all-optical switching

Xu ZHAO,Ming-hua WANG

DOI: https://doi.org/10.13756/j.gtxyj.2001.01.015

2001-01-01

Abstract:The paper presents the sorts, features and applications of semiconductor all-optical switches. According to their structures, the switches can be divided into planar-type and waveguide-type. According to their operation principles, they can be divided into phase-shift-type and frequency-shift-type. The high efficiency of all-optical switching has been proved in 100 Gbit/s optical transmission experiment.
All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Yu Zhang,Shuai Liu,Jiming Chen,Siying Cheng,Wei Jin,Yaxun Zhang,Zhihai Liu,Jianzhong Zhang,Libo Yuan

DOI: https://doi.org/10.1364/oe.468095

IF: 3.8

2022-01-01

Optics Express

Abstract:Photonic switches have attractive application prospects in optical communication data networks that require dynamic reconfiguration. Integrating optical switching devices with optical fiber, the most widely deployed photonic technology platform, can realize signal transmission and processing in practical applications. Here, we demonstrate the multilevel optical switching using the phase-change material Ge2Sb2Te5 (GST) integrated on a graded-index multimode fiber. This switching process works by exploiting the significant difference in extinction coefficient between the crystalline state and the amorphous state of the GST. Using GST to achieve the switch function, no external energy source is needed to maintain the existing state of the switch, and the device is nonvolatile. This multi-level optical switch is an all-fiber integrated device. We apply GST to the end facets of the graded-index multimode fiber by magnetron sputtering, which is a reflective structure. A pulsing scheme is used to control the optical propagation state of the optical modulation signal to realize the switching function. It can store up to 11 non-volatile reliable and repeatable levels encoded by the pump source laser with a wavelength of 1550 nm. At the same time, the switching process between states is on the order of hundreds of nanoseconds. The present experimental results demonstrate the feasibility of 11 multilevel states in the field of optical fibers commonly used in communications. It can be well coupled with the all-fiber terminal device. It also shows that the device is still applicable in the 1525 nm∼1610 nm broadband range, promising for designing future multilevel photonic switches and memory devices.
Compact All-Optical Switches Based on Photon-Induced Suppression of Mode Interference

李龙志,唐奕,杨建义,王明华,江晓清

2006-01-01

Abstract:An optically activated optical switch based on suppression of mode interference (SMI) is presented. The imaging properties of multi-mode interference (MMI) section in the switch with Y-branch can be modified by a controlling light injection. The switch was simulated by finite difference beam propagation method (FD-BPM) and fabricated on GaAlAs/GaAs epitaxial materials. At the wavelength of 1.31 um, the primary experiment showed an extinction ratio of about 8 dB with controlling light power density of 73.5 W/mm2.
Photon-Induced Total-Internal-Reflection All-Optical Switches

XQ Jiang,JY Yang,HZ Zhan,KJ Chen,Y Tang,XH Li,MH Wang

DOI: https://doi.org/10.1109/lpt.2003.821053

IF: 2.6

2004-01-01

IEEE Photonics Technology Letters

Abstract:An all-optical switch is demonstrated. The switch is based on the photon-induced carrier effect and the principle of the total internal reflection (TIR). An asymmetric Y-branch with multimode waveguides is designed and fabricated on GaAlAs/GaAs epitaxial materials. The 805-nm light is used to activate the carrier effects and generate the total-reflection effect at the branch. The device is characterized at the wavelength of 1.31 mum. Its extinction ratio is larger than 18.0 dB when the injected optical density is 15 X 10(1) W/mm(2).
All-optical Bistable Switching and Signal Regeneration in a Semiconductor Layered Distributed-Feedback/fabry–perot Structure

J HE,M CADA,MA DUPERTUIS,D MARTIN,F MORIERGENOUD,C ROLLAND,AJ SPRINGTHORPE

DOI: https://doi.org/10.1063/1.109883

IF: 4

1993-01-01

Applied Physics Letters

Abstract:We report the experimental observation of optical bistable switching in a combined distributed-feedback/Fabry–Perot structure. The sample had a high switching contrast with almost zero reflectivity in the on-state. A turnoff time as short as 4 ns was measured. The threshold power for bistability was about 2 mW. Bistable switching with the memory effect and a potential application for all-optical signal regeneration were demonstrated.
All-optical switching in planar semiconductor microcavities

S. Schumacher,N. H. Kwong,R. Binder,Arthur L. Smirl

DOI: https://doi.org/10.48550/arXiv.0712.2060

2007-12-13

Abstract:Using a microscopic many-particle theory, we propose all-optical switching in planar semiconductor microcavities where a weak beam switches a stronger signal. Based on four-wave-mixing instabilities, the general scheme is a semiconductor adaptation of a recently demonstrated switch in an atomic vapor [Dawes et al., Science 308, 672 (2005)].

Other Condensed Matter
Thermo-Optic Switch Based On 2d-Si Photonic Crystals

T Chu,H Yamada,S Ishida,Y Arakawa

DOI: https://doi.org/10.1109/GROUP4.2004.1416726

2004-01-01

Abstract:A Mach-Zehnder interferometer-type optic switch was firstly realized on Si photonic-crystal (PhC) slab structure, by using thermo-optic effect. The maximum extinction ratio was 22 dB, and the switching speed reached 200 mus.
All-optical switching at the two-photon limit with interference-localized states

Ville A. J. Pyykkönen,Grazia Salerno,Jaakko Kähärä,Päivi Törmä

DOI: https://doi.org/10.1103/PhysRevResearch.5.043259

2023-12-20

Abstract:We propose a single-photon-by-single-photon all-optical switch concept based on interference-localized states on lattices and their delocalization by interaction. In its 'open' operation, the switch stops single photons while allows photon pairs to pass the switch. Alternatively, in the 'closed' operation, the switch geometrically separates single-photon and two-photon states. We demonstrate the concept using a three-site Stub unit cell and the diamond chain. The systems are modeled by Bose-Hubbard Hamiltonians, and the dynamics is solved by exact diagonalization with Lindblad master equation. We discuss realization of the switch using photonic lattices with nonlinearities, superconductive qubit arrays, and ultracold atoms. We show that the switch allows arbitrary 'ON'/'OFF' contrast while achieving picosecond switching time at the single-photon switching energy with contemporary photonic materials.

Optics,Mesoscale and Nanoscale Physics,Quantum Physics
All-Optical Switch Based on Two-Pump Four-Wave Mixing in Fibers Without A Frequency Shift

Yu Tian,Xiaosheng Xiao,Shiming Gao,Changxi Yang

DOI: https://doi.org/10.1364/ao.46.005588

IF: 1.9

2007-01-01

Applied Optics

Abstract:We report an all-optical switch based on two-pump four-wave mixing in fibers. The switched signal is not shifted in frequency in this scheme. For different signal wavelengths, the pump wavelengths and powers can be optimized to achieve the best performance. The principle of how to design the switch is discussed in detail. A high extinction ratio of -60 dB is obtained when the pump parameters are optimized by a genetic algorithm that exhibits good convergence property and high computing efficiency. The effect of zero-dispersion wavelength fluctuations along the fiber on the switch is analyzed.
Optical switch based on multimode interference coupler

Fan Wang,Jianyi Yang,Limei Chen,Xiaoqing Jiang,Minghua Wang

DOI: https://doi.org/10.1109/LPT.2005.863201

IF: 2.6

2006-01-01

IEEE Photonics Technology Letters

Abstract:An optical switch based on the multimode interference (MMI) coupler is demonstrated in this letter. The device is designed and fabricated in polymeric materials and the thermooptic (TO) effect of polymers, which has a negative TO coefficient, is employed to change the self-imaging effect of a side-heated MMI coupler and realize optical switching. The switching power is only 22 mW. The experimental...
Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide

Kun Shang,Lei Niu,Huimin Jin,Haoxian Wang,Wei Zhang,Fuwan Gan,Peipeng Xu

DOI: https://doi.org/10.1364/OL.511301

2024-02-01

Abstract:We propose a non-volatile 2 × 2 photonic switch based on multimode interference in an Sb2Se3-loaded waveguide. The different modal symmetries of the TE0 and TE1 modes supported in the multimode region change their propagation constants distinctly upon the Sb2Se3 phase transition. Through careful optical design and FDTD optimization of the multimode waveguide dimensions, efficient switching is achieved despite the modest index contrast of Sb2Se3 relative to Ge2Sb2Te5. The fabricated optical switch demonstrates favorable characteristics, including low insertion loss of ∼1 dB, a compact length of ∼27 µm, and small cross talk below -15 dB across a 35 nm bandwidth. Such non-volatile and broadband components will be critical for future high-density programmable photonic-integrated circuits for optical communications and signal processing.
Ultrafast, Energy-Efficient Photonic Switches Based on Semiconductor Nanostructures

Osamu Wada,Chaoyuan Jin

DOI: https://doi.org/10.1364/acpc.2013.ath3b.4

2013-01-01

Abstract:This paper discusses fundamental limits in photonic switching devices taking into account of the material’s optical nonlinearity as well as optical field enhancement within the device structures. Quantum dot materials in corporation with optical cavity structures are expected to be a powerful combination for ultrafast, energy-efficient photonic switches. Recent demonstration of fJ/cm2 class switching in QD-based vertical cavity structure is described.
Research of high speed optical switch based on compound semiconductor

MingHua Wang,Wei Qi,Hui Yu,XiaoQing Jiang,JianYi Yang

DOI: https://doi.org/10.1007/s11434-009-0336-7

2009-01-01

Chinese Science Bulletin

Abstract:High-speed optical switch and its array are the crucial components of all-optical switching system. This paper presents the analytical model of a total-internal-reflection (TIR) optical switch. By employing the carrier injection effect in GaAs and the GaAs/AlGaAs double heterojunction structure, the X-junction TIR switch and the Mach-Zehnder interference (MZI) switch are demonstrated at 1.55 µm. The measured results show that the extinction ratio of both switches exceeds 20 dB. The switching speed reaches the scale of 10 ns.
Non-volatile 2?×?2 optical switch using multimode interference in an Sb_2Se_3-loaded waveguide

Kun Shang,Lei Niu,Huimin Jin,Haoxian Wang,Wei Zhang,Fuwan Gan,Peipeng Xu

DOI: https://doi.org/10.1364/ol.511301

IF: 3.6

2024-01-31

Optics Letters

Abstract:Kun Shang, Lei Niu, Huimin Jin, Haoxian Wang, Wei Zhang, Fuwan Gan, Peipeng Xu We propose a non-volatile 2?×?2 photonic switch based on multimode interference in an Sb_2Se_3-loaded waveguide. The different modal ... [Opt. Lett. 49, 722-725 (2024)]

optics
All-Optical Switch and Transistor Gated by One Stored Photon

Wenlan Chen,Kristin M. Beck,Robert Bücker,Michael Gullans,Mikhail D. Lukin,Haruka Tanji-Suzuki,Vladan Vuletić

DOI: https://doi.org/10.1126/science.1238169

2014-01-14

Abstract:The realization of an all-optical transistor where one 'gate' photon controls a 'source' light beam, is a long-standing goal in optics. By stopping a light pulse in an atomic ensemble contained inside an optical resonator, we realize a device in which one stored gate photon controls the resonator transmission of subsequently applied source photons. A weak gate pulse induces bimodal transmission distribution, corresponding to zero and one gate photons. One stored gate photon produces fivefold source attenuation, and can be retrieved from the atomic ensemble after switching more than one source photon. Without retrieval, one stored gate photon can switch several hundred source photons. With improved storage and retrieval efficiency, our work may enable various new applications, including photonic quantum gates, and deterministic multiphoton entanglement.

Quantum Physics,Atomic Physics,Optics
Study on semiconductor optical gain switching gate in photon switching system

Zhijian Zhang,Chaoyang Zhang,Yili Guo,Bingkun Zhou,Quansheng Zhang,Ronghan Wu

1995-01-01

Abstract:The dynamic and static optical properties of common-cavity two-section semiconductor optical gain switching gate were studied. The possibility of using the gate to realize a kind of pocket switching was discussed. Primary experiments for optical fiber communication based on these switches were carried out. A proposal for developing a new photon switching system was provided.
Photonic Switching Devices Based on Semiconductor Nano-Structures

Chaoyuan Jin,Osamu Wada

DOI: https://doi.org/10.1088/0022-3727/47/13/133001

2014-01-01

Abstract:Focusing and guiding light into semiconductor nanostructures can deliver revolutionary concepts for photonic devices, which offer a practical pathway towards next-generation power-efficient optical networks. In this review, we consider the prospects for photonic switches using semiconductor quantum dots (QDs) and photonic cavities which possess unique properties based on their low dimensionality. The optical nonlinearity of such photonic switches is theoretically analyzed by introducing the concept of a field enhancement factor. This approach reveals drastic improvement in both power-density and speed, which is able to overcome the limitations that have beset conventional photonic switches for decades. In addition, the overall power consumption is reduced due to the atom-like nature of QDs as well as the nano-scale footprint of photonic cavities. Based on this theoretical perspective, the current state-of-the-art of QD/cavity switches is reviewed in terms of various optical nonlinearity phenomena which have been utilized to demonstrate photonic switching. Emerging techniques, enabled by cavity nonlinear effects such as wavelength tuning, Purcell-factor tuning and plasmonic effects are also discussed.
Electromagnetically induced transparency via localized surface plasmon mode-assisted hybrid cavity QED

Xiaomiao Li,Famin Liu,Zigeng Li,Hongyan Zhu,Fan Wang,Xiaolan Zhong

DOI: https://doi.org/10.1088/1674-1056/acd7d2

2023-05-23

Chinese Physics B

Abstract:Abstract In recent years, most of the previous studies focused on the perfect absorption and high-efficiency quantum memory of the one-sided system, which ignoring the characteristics of its optical switching contrast. Thus, the performance of all-optical switching and optical transistors is limited. Herein, we propose a localized surface plasmon (LSP) mode-assisted cavity QED system which consists of a Λ-shaped three-level quantum emitter (QE), a metal nanoparticle and a one-sided optical cavity with a fully reflected mirror. In this system, the QE coherently couples to the cavity and LSP mode, respectively, which is manipulated by the control field. As a result, considerable high and stable switch contrast 90% can be achievable due to the strong confined field of LSP mode and perfect absorption of the optical medium. In addition, we obtain a power dependent effect between the control field and the transmitted frequency as a result of the converted dark state. We employ the Heisenberg-Langevin equation and numerical Master equation formalisms to explain high switching, controllable output light and the dark state. Our system introduces an effective method to improve the performance of optical switches based on one-sided system in quantum information storage and quantum communication.

physics, multidisciplinary

Optical switching based on transparency in a semiconductor double-quantum well

Quantum-confined Stark Effect and Its Application in Optical Switches

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

Ultrahigh speed semiconductor all-optical switching

All-optically Modulated Nonvolatile Optical Switching Based on a Graded-Index Multimode Fiber.

Compact All-Optical Switches Based on Photon-Induced Suppression of Mode Interference

Photon-Induced Total-Internal-Reflection All-Optical Switches

All-optical Bistable Switching and Signal Regeneration in a Semiconductor Layered Distributed-Feedback/fabry–perot Structure

All-optical switching in planar semiconductor microcavities

Thermo-Optic Switch Based On 2d-Si Photonic Crystals

All-optical switching at the two-photon limit with interference-localized states

All-Optical Switch Based on Two-Pump Four-Wave Mixing in Fibers Without A Frequency Shift

Optical switch based on multimode interference coupler

Non-volatile 2 × 2 optical switch using multimode interference in an Sb2Se3-loaded waveguide

Ultrafast, Energy-Efficient Photonic Switches Based on Semiconductor Nanostructures

Research of high speed optical switch based on compound semiconductor

Non-volatile 2?×?2 optical switch using multimode interference in an Sb_2Se_3-loaded waveguide

All-Optical Switch and Transistor Gated by One Stored Photon

Study on semiconductor optical gain switching gate in photon switching system

Photonic Switching Devices Based on Semiconductor Nano-Structures

Electromagnetically induced transparency via localized surface plasmon mode-assisted hybrid cavity QED